P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these powe

TRANSISTORS

Features: ■ P-Channel Versatility ■ Compact Plastic Package ■ Fast Switching ■ Low Drive Current ■ Ease of Paralleling ■ Excellent Temperature Stability

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

P-Channel MOSFET

■ Features ● VDS (V) =-100V ● ID =-13 A (VGS =-10V) ● RDS(ON)

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

isc P-Channel Mosfet Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs

Features • 12A, 100V • rDS(ON) = 0.300W • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC B

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

TRANSISTORS

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs

Power MOSFET

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

isc P-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) • Advanced trench process technology • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Fast switching application.

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology Surface Mount

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

HEXFET짰 Power MOSFET

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

P-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

丝印代码：D2PAK；isc P-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) • Advanced trench process technology • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Fast switching application.

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology Surface Mount

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

isc P-Channel MOSFET Transistor

• DESCRIPTION • Power management in notebook computer • Portable equipment and battery powered systems • FEATURES • Static drain-source on-resistance: RDS(on)≤0.3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

P-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid

Repetitive avalanche rated

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

isc P-Channel Mosfet Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid

HEXFET짰 Power MOSFET

FEATURES • Surface Mount • Available in Tape And Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Lead-Free

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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P-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

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HEXFET짰 Power MOSFET

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HEXFET POWER MOSFET

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P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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Power MOSFET

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Power MOSFET

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Power MOSFET

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9.5NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER

DESCRIPTION The TDA9530 is a triple video amplifier with high voltage Bipolar/CMOS/DMOS technology (BCD). It can drive the 3 cathodes of a monitor CRT in DC or AC coupling mode. A DC coupling application is obtained by connecting a triple DC controlled cir cuit either on the input pin or on