型号 功能描述 生产厂家&企业 LOGO 操作
IRF9530NL

isc P-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) • Advanced trench process technology • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Fast switching application.

ISC

无锡固电

IRF9530NL

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

KERSEMI

IRF9530NL

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

Advanced Process Technology Surface Mount

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

28 V/7 A Smart Motor Module

General Description The AOZ9530QV is an integrated half-bridge gate driver with smart functions. The device includes one half-bridge gate driver, capable of driving high-side and low-side N-channel MOSFETs. Using two AOZ9530QV for single phase motor driver and three AOZ9530QV for three phase

AOSMD

万国半导体

PCIX I/O System Clock Generator with EMI Control Features

Features • Dedicated clock buffer power pins for reduced noise, crosstalk and jitter • Input clock frequency of 25 MHz to 33.3 MHz • Output frequencies of XINx1, XINx2, XINx3 and XINx4 • Output grouped in two banks of five clocks each • One REF XIN clock output • SMBus clock control interfac

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

MACHINE SCREW PAN PHILLIPS 10-32

文件:130.87 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

4 CML Output, Low Jitter Clock Generator

文件:979.91 Kbytes Page:41 Pages

AD

亚德诺

4 CML Output, Low Jitter Clock Generator

文件:979.91 Kbytes Page:41 Pages

AD

亚德诺

IRF9530NL产品属性

  • 类型

    描述

  • 型号

    IRF9530NL

  • 功能描述

    MOSFET P-CH 100V 14A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-15 9:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2015+
TO-262
12500
全新原装,现货库存长期供应
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
IR
24+
TO-262
60000
Infineon Technologies
23+
原装
7000
IR
21+
TO-262
10000
原装现货假一罚十
ir
24+
500000
行业低价,代理渠道
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
IR
24+
NA/
4195
优势代理渠道,原装正品,可全系列订货开增值税票
IR
14+PBF
TO-262
10398
现货

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