Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

丝印代码：D2PAK；isc P-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) • Advanced trench process technology • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Fast switching application.

-100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology Surface Mount

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

HEXFET짰 Power MOSFET

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ADVANCED PROCESS TECHNOLOGY

文件：767.31 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：767.31 Kbytes Page：11 Pages

HEXFET짰 Power MOSFET

文件：823.61 Kbytes Page：11 Pages

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：22.71 Kbytes Page：2 Pages

9.5NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER

DESCRIPTION The TDA9530 is a triple video amplifier with high voltage Bipolar/CMOS/DMOS technology (BCD). It can drive the 3 cathodes of a monitor CRT in DC or AC coupling mode. A DC coupling application is obtained by connecting a triple DC controlled cir cuit either on the input pin or on