Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

isc P-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) • Advanced trench process technology • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Fast switching application.

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology Surface Mount

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

HEXFET짰 Power MOSFET

文件：823.61 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：767.31 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：767.31 Kbytes Page：11 Pages

HEXFET짰 Power MOSFET

文件：823.61 Kbytes Page：11 Pages

28 V/7 A Smart Motor Module

General Description The AOZ9530QV is an integrated half-bridge gate driver with smart functions. The device includes one half-bridge gate driver, capable of driving high-side and low-side N-channel MOSFETs. Using two AOZ9530QV for single phase motor driver and three AOZ9530QV for three phase

PCIX I/O System Clock Generator with EMI Control Features

Features • Dedicated clock buffer power pins for reduced noise, crosstalk and jitter • Input clock frequency of 25 MHz to 33.3 MHz • Output frequencies of XINx1, XINx2, XINx3 and XINx4 • Output grouped in two banks of five clocks each • One REF XIN clock output • SMBus clock control interfac

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

4 CML Output, Low Jitter Clock Generator

文件：979.91 Kbytes Page：41 Pages

4 CML Output, Low Jitter Clock Generator

文件：979.91 Kbytes Page：41 Pages