Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

isc P-Channel MOSFET Transistor

• DESCRIPTION • Power management in notebook computer • Portable equipment and battery powered systems • FEATURES • Static drain-source on-resistance: RDS(on)≤0.3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

P-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters

HEXFET POWER MOSFET

文件：3.52791 Mbytes Page：7 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：22.71 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：22.71 Kbytes Page：2 Pages

9.5NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER

DESCRIPTION The TDA9530 is a triple video amplifier with high voltage Bipolar/CMOS/DMOS technology (BCD). It can drive the 3 cathodes of a monitor CRT in DC or AC coupling mode. A DC coupling application is obtained by connecting a triple DC controlled cir cuit either on the input pin or on