Advanced Process Technology Surface Mount

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

Advanced Process Technology

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：22.71 Kbytes Page：2 Pages

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：22.71 Kbytes Page：2 Pages

9.5NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER

DESCRIPTION The TDA9530 is a triple video amplifier with high voltage Bipolar/CMOS/DMOS technology (BCD). It can drive the 3 cathodes of a monitor CRT in DC or AC coupling mode. A DC coupling application is obtained by connecting a triple DC controlled cir cuit either on the input pin or on