IRF644价格

参考价格:¥26.9958

型号:IRF644 品牌:Vishay 备注:这里有IRF644多少钱,2024年最近7天走势,今日出价,今日竞价,IRF644批发/采购报价,IRF644行情走势销售排行榜,IRF644报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF644

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF644

PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=14A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicat

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF644

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技

Vishay
IRF644

PowerMOSFET(Vdss=250V,Rds(on)=240mohm,Id=14A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF644

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay
IRF644

N-ChannelMosfetTransistor

文件:205.89 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF644

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=250V ♦LowerRDS(ON):0.214Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PowerMOSFET(Vdss=250V,Rds(on)=240mohm,Id=14A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=250V,Rds(on)=240mohm,Id=14A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=250V,Rds(on)=240mohm,Id=14A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=14A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswtiching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivieness. ●SurfaceMount ●AvailableinTape&Reel ●Dynamicdv/dtRating ●RepetitiveAvalanche

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswtiching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivieness. ●SurfaceMount ●AvailableinTape&Reel ●Dynamicdv/dtRating ●RepetitiveAvalanche

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

iscN-ChannelMOSFETTransistor

文件:280.84 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:280.84 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

HEXFET짰PowerMOSFET

文件:280.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

HEXFET짰PowerMOSFET

文件:280.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

文件:280.08 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:171.5 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

Availableintapeandreel

文件:186.97 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:249.24 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:249.24 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:249.24 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Vishay

DualHighSpeed,ImplantedBiFETOpAmp

PRODUCTDESCRIPTION TheAD644isapairofmatchedhighspeedmonolithicFETinputoperationalamplifiersfabricatedwiththemostadvancedbipolar,JFETandlaser-trimmingtechnologies.TheAD644offersmatchedbiascurrentsthataresignificantlylowerthancurrentlyavailablemonolithicdualB

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

DualHighSpeed,ImplantedBiFETOpAmp

PRODUCTDESCRIPTION TheAD644isapairofmatchedhighspeedmonolithicFETinputoperationalamplifiersfabricatedwiththemostadvancedbipolar,JFETandlaser-trimmingtechnologies.TheAD644offersmatchedbiascurrentsthataresignificantlylowerthancurrentlyavailablemonolithicdualB

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

600Hand600NHseries

文件:324.88 Kbytes Page:8 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

MountingbracketsrequiredtomeetUL/CSAexternalmountingrequirements.

文件:1.06838 Mbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

MountingbracketsrequiredtomeetUL/CSAexternalmountingrequirements.

文件:1.06838 Mbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

IRF644产品属性

  • 类型

    描述

  • 型号

    IRF644

  • 功能描述

    MOSFET N-Chan 250V 14 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-10 18:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!
Vishay Siliconix
23+
D2PAK(TO-263)
30000
晶体管-分立半导体产品-原装正品
IR
24+
TO 220
161323
明嘉莱只做原装正品现货
IR
23+
原厂封装
9888
专做原装正品,假一罚百!
IR
21+
TO-263
6850
只做原装正品假一赔十!正规渠道订货!
IR
23+
TO-220AB
8600
全新原装现货
IR
23+
TO220
100
大批量供应优势库存热卖
VISHAY(威世)
23+
TO-263-3
8357
支持大陆交货,美金交易。原装现货库存。
IR
23+
TO-220
30000
全新原装现货,价格优势
IR
22+
D2-PAK
9450
原装正品,实单请联系

IRF644芯片相关品牌

  • Allegro
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