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位置：首页 > IC中文资料第2198页 > IRF644

IRF644价格

参考价格：￥26.9958

型号：IRF644 品牌：Vishay 备注：这里有IRF644多少钱，2026年最近7天走势，今日出价，今日竞价，IRF644批发/采购报价，IRF644行情走势销售排行榜，IRF644报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF644

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

IRF644

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

VISHAYVishay Siliconix

威世威世科技公司

IRF644

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

VISHAYVishay Siliconix

威世威世科技公司

IRF644

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applicat

IRF

IRF644

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF644

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching;

VISHAYVishay Siliconix

威世威世科技公司

IRF644

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

INFINEON

英飞凌

IRF644

N-Channel Mosfet Transistor

文件：205.89 Kbytes Page：2 Pages

ISC

无锡固电

IRF644

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF644_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

VISHAYVishay Siliconix

威世威世科技公司

IRF644A

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.214Ω(Typ.)

FAIRCHILD

仙童半导体

IRF644B

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

IRF644N

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF644NL

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF644NS

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF644PBF

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

VISHAYVishay Siliconix

威世威世科技公司

IRF644PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

VISHAYVishay Siliconix

威世威世科技公司

IRF644PBF-BE3

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

VISHAYVishay Siliconix

威世威世科技公司

IRF644S

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swtiching, ruggedized device design, low on-resistance and cost-effectivieness. ● Surface Mount ● Available in Tape & Reel ● Dynamic dv/dt Rating ● Repetitive Avalanche

IRF

IRF644SPBF

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swtiching, ruggedized device design, low on-resistance and cost-effectivieness. ● Surface Mount ● Available in Tape & Reel ● Dynamic dv/dt Rating ● Repetitive Avalanche

IRF

IRF644A

isc N-Channel MOSFET Transistor

文件：280.84 Kbytes Page：2 Pages

ISC

无锡固电

IRF644A

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF644B

isc N-Channel MOSFET Transistor

文件：280.84 Kbytes Page：2 Pages

ISC

无锡固电

IRF644B-FP001

MOSFET 250V Single

ONSEMI

安森美半导体

IRF644N

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NL

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NL

HEXFET짰 Power MOSFET

文件：280.08 Kbytes Page：12 Pages

IRF

IRF644NLPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NPBF

HEXFET짰 Power MOSFET

文件：280.08 Kbytes Page：12 Pages

IRF

IRF644NS

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NS

HEXFET짰 Power MOSFET

文件：280.08 Kbytes Page：12 Pages

IRF

IRF644NSPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSTRL

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSTRLPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSTRR

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSTRRPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644S

Available in tape and reel

文件：186.97 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644SPBF

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644STRLPBFA

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644STRRPBFA

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

MRF644

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 25 Watts Minimum Gain = 6.2 dB Efficie

MOTOROLA

摩托罗拉

MI-PC644-IX

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

VICOR

MI-PC644-IY

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

VICOR

MI-PC644-MY

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

VICOR

MI-QC644-ISY

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

VICOR

IRF644产品属性

  • 类型

    描述

  • 型号

    IRF644

  • 功能描述

    MOSFET N-Chan 250V 14 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF644供应商更多...

更新时间：2026-5-24 21:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
IRF644
IR
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
深圳市昌和盛利电子有限公司
IRF644B
FAIRCHILDE
26+
TO-220
29526
原装正品价格优惠,长期优势供应
询价
深圳市坤融电子科技有限公司
IRF644NS
IR
2025+
TO-263
2500
原装进口价格优 请找坤融电子!
询价
深圳市中联芯电子有限公司
IRF644PBF
IR/INFINEON
25+
TO-220
5715
只做原装 有挂有货 假一罚十
询价
深圳市金华微盛电子有限公司
IRF644NSPBF
IR
19+
TO-263
11340
询价
中天科工半导体（深圳）有限公司
IRF644
INFINEON/英飞凌
25+
TO-220
20300
INFINEON/英飞凌原装特价IRF644即刻询购立享优惠#长期有货
询价
深圳市赛尔通科技有限公司
IRF644PBF
VISHAY
23+
TO-220AB
65400
询价
深圳市创新迹电子有限公司
IRF644PBFMOS(场效应管)
VISHAY/威世
2021+
TO-220AB
9000
原装现货,随时欢迎询价
询价
深圳市昊创电子有限公司
IRF644PBF
VISHAY
2021+
TO-220AB
9450
原装现货。
询价
深圳市勤思达科技有限公司
IRF644PBF
VISHAY/威世
2021+
TO-220AB
12000
勤思达 只做原装 现货库存
询价

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IRF644规格书下载地址

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