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位置：首页 > IC中文资料第2198页 > IRF644

IRF644价格

参考价格：￥26.9958

型号：IRF644 品牌：Vishay 备注：这里有IRF644多少钱，2026年最近7天走势，今日出价，今日竞价，IRF644批发/采购报价，IRF644行情走势销售排行榜，IRF644报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF644

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

IRF644

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applicat

IRF

IRF644

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

VISHAYVishay Siliconix

威世威世科技公司

IRF644

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF644

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

VISHAYVishay Siliconix

威世威世科技公司

IRF644

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRF644

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

INFINEON

英飞凌

IRF644

N-Channel Mosfet Transistor

文件：205.89 Kbytes Page：2 Pages

ISC

无锡固电

IRF644

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF644_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

VISHAYVishay Siliconix

威世威世科技公司

IRF644A

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.214Ω(Typ.)

FAIRCHILD

仙童半导体

IRF644B

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

FAIRCHILD

仙童半导体

IRF644N

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF644NL

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF644NS

Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF644PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

VISHAYVishay Siliconix

威世威世科技公司

IRF644PBF

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

VISHAYVishay Siliconix

威世威世科技公司

IRF644PBF-BE3

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

VISHAYVishay Siliconix

威世威世科技公司

IRF644S

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swtiching, ruggedized device design, low on-resistance and cost-effectivieness. ● Surface Mount ● Available in Tape & Reel ● Dynamic dv/dt Rating ● Repetitive Avalanche

IRF

IRF644SPBF

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swtiching, ruggedized device design, low on-resistance and cost-effectivieness. ● Surface Mount ● Available in Tape & Reel ● Dynamic dv/dt Rating ● Repetitive Avalanche

IRF

IRF644A

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF644A

isc N-Channel MOSFET Transistor

文件：280.84 Kbytes Page：2 Pages

ISC

无锡固电

IRF644B

isc N-Channel MOSFET Transistor

文件：280.84 Kbytes Page：2 Pages

ISC

无锡固电

IRF644B-FP001

MOSFET 250V Single

ONSEMI

安森美半导体

IRF644N

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NL

HEXFET짰 Power MOSFET

文件：280.08 Kbytes Page：12 Pages

IRF

IRF644NL

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NLPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NPBF

HEXFET짰 Power MOSFET

文件：280.08 Kbytes Page：12 Pages

IRF

IRF644NS

HEXFET짰 Power MOSFET

文件：280.08 Kbytes Page：12 Pages

IRF

IRF644NS

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSTRL

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSTRLPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSTRR

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644NSTRRPBF

Power MOSFET

文件：171.5 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644S

Available in tape and reel

文件：186.97 Kbytes Page：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644SPBF

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644STRLPBFA

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF644STRRPBFA

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

AD644

Dual High Speed, Implanted BiFET Op Amp

PRODUCT DESCRIPTION The AD644 is a pair of matched high speed monolithic FET input operational amplifiers fabricated with the most advanced bipolar, JFET and laser-trimming technologies. The AD644 offers matched bias currents that are significantly lower than currently available monolithic dual B

AD

亚德诺

AD644

Dual High Speed, Implanted BiFET Op Amp

PRODUCT DESCRIPTION The AD644 is a pair of matched high speed monolithic FET input operational amplifiers fabricated with the most advanced bipolar, JFET and laser-trimming technologies. The AD644 offers matched bias currents that are significantly lower than currently available monolithic dual B

AD

亚德诺

644H

600H and 600NH series

文件：324.88 Kbytes Page：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

A644PHC

Mounting brackets required to meet UL/CSA external mounting requirements.

文件：1.06838 Mbytes Page：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

A644PHCW

Mounting brackets required to meet UL/CSA external mounting requirements.

文件：1.06838 Mbytes Page：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF644产品属性

  • 类型

    描述

  • 型号

    IRF644

  • 功能描述

    MOSFET N-Chan 250V 14 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF644供应商更多...

更新时间：2026-2-15 11:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市斌能达电子科技有限公司
IRF644
ST
24+
TO-220
6000
全新原装深圳仓库现货有单必成
询价
深圳市宇创芯科技有限公司
IRF644
IR
24+
TO220
9600
原装现货,优势供应,支持实单!
询价
贸泽芯城（深圳）电子科技有限公司
IRF644
IR/VISHAY
23+
TOTO-220
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市勤思达科技有限公司
IRF644PBF
VISHAY/威世
2021+
TO-220AB
12000
勤思达 只做原装 现货库存
询价
深圳市坤融电子科技有限公司
IRF644NS
IR
2025+
TO-263
2500
原装进口价格优 请找坤融电子!
询价
艾睿（深圳）半导体有限公司
IRF644
IR
2447
TO220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市赛特兴科技有限公司
IRF644
ST
23+
TO-220
12800
正规渠道,只有原装!
询价
深圳市莱克讯科技有限公司
IRF644
IR
1923+
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
询价
深圳市威尔健半导体有限公司
IRF644
哈里斯
23+
TO-220
50000
全新原装正品现货,支持订货
询价
深圳市鑫炜纳电子有限公司
IRF644
ST
2022+
TO-220
7600
原厂原装,假一罚十
询价

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IRF644规格书下载地址

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