Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.214Ω(Typ.)

SEMICONDUCTORS

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isc N-Channel MOSFET Transistor

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Dual High Speed, Implanted BiFET Op Amp

PRODUCT DESCRIPTION The AD644 is a pair of matched high speed monolithic FET input operational amplifiers fabricated with the most advanced bipolar, JFET and laser-trimming technologies. The AD644 offers matched bias currents that are significantly lower than currently available monolithic dual B

Dual High Speed, Implanted BiFET Op Amp

PRODUCT DESCRIPTION The AD644 is a pair of matched high speed monolithic FET input operational amplifiers fabricated with the most advanced bipolar, JFET and laser-trimming technologies. The AD644 offers matched bias currents that are significantly lower than currently available monolithic dual B

600H and 600NH series

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Mounting brackets required to meet UL/CSA external mounting requirements.

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Mounting brackets required to meet UL/CSA external mounting requirements.

文件：1.06838 Mbytes Page：4 Pages