Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swtiching, ruggedized device design, low on-resistance and cost-effectivieness. ● Surface Mount ● Available in Tape & Reel ● Dynamic dv/dt Rating ● Repetitive Avalanche

Power MOSFET

Surface-mount\nAvailable in tape and reel\nDynamic dv/dt rating;

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

Available in tape and reel

文件：186.97 Kbytes Page：8 Pages

HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swtiching, ruggedized device design, low on-resistance and cost-effectivieness. ● Surface Mount ● Available in Tape & Reel ● Dynamic dv/dt Rating ● Repetitive Avalanche

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

Power MOSFET

文件：249.24 Kbytes Page：10 Pages

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 25 Watts Minimum Gain = 6.2 dB Efficie

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages