Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.327Ω(Typ.)

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

Description Third International Rectifier from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleli

N-channel mosfet transistor

Features • With TO-220 package • Simple drive requirements • Fast switching • VDSS=250V; RDS(ON)≤0.45Ω ;ID=8.1A • 1.gate 2.drain 3.source

N-Channel MOSFET Transistor

DESCRIPTION • Drain Current-ID=8.1A@ TC=25°C • Drain SourceVoltage- : VDSS= 250V(Min) • Static Drain-SourceOn-Resistance : RDS(OD = 0.45 Ω(Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • High current, high speedswitching • Switch mode power supplies • DC-DC conv

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET

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SEMICONDUCTORS

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MOSFET/场效应管

Power MOSFET

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

Power MOSFET

文件：157.84 Kbytes Page：8 Pages

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.327Ω(Typ.)

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Available in Tape and Reel

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the h

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It p

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

Power MOSFET

文件：157.84 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

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SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Advanced Power MOSFET

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POWER MOSFET

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isc N-Channel MOSFET Transistor

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N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET

文件：326.43 Kbytes Page：14 Pages

HEXFET짰 Power MOSFET

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Power MOSFET

文件：157.84 Kbytes Page：8 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：MOSFET N-CHANNEL 250V 分立半导体产品 晶体管 - FET，MOSFET - 单个

T-1 Subminiature Lamps

T-1¼ Subminiature Lamps

634M Series D-Sub Connectors | Machined Pins | High Density Three Contact Rows with 0.350 (8.89mm) Footprint Right Angle Bend | Receptacle

Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend with Machined Contacts .090(2.29mm) Contact Spacing 0.078(1.98mm) Row Spacing Plug and Receptacle in 15, 26, 44 or 62 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination M

634 Series D-Sub Connectors | High Density Three Contact Rows with .350(8.89mm) Footprint RightAngle Bend | Receptacle

Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend Standard Contact Spacing and Row Spacing Optional 9th pin recessed on 15 Contact Size in accordance with VESA Display Data Channel Standard Plug and Receptacle in 15, 26, 44, 62 or 78 Contact Sizes

Low Frequencies

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DC axial fans

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