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位置：首页 > IC中文资料第860页 > IRF634NS

型号 功能描述 生产厂家 企业 LOGO 操作
IRF634NS

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VishayVishay Siliconix

威世威世科技公司

IRF634NS

Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

IRF

IRF634NS

HEXFET® Power MOSFET

Infineon

英飞凌

IRF634NSPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn

IRF

IRF634NSPBF

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VishayVishay Siliconix

威世威世科技公司

IRF634NSTRL

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VishayVishay Siliconix

威世威世科技公司

IRF634NSTRLPBF

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VishayVishay Siliconix

威世威世科技公司

IRF634NSTRR

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VishayVishay Siliconix

威世威世科技公司

IRF634NSTRRPBF

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer

VishayVishay Siliconix

威世威世科技公司

634

T-1 Subminiature Lamps

T-1¼ Subminiature Lamps

GILWAY

634M-SERIES

634M Series D-Sub Connectors | Machined Pins | High Density Three Contact Rows with 0.350 (8.89mm) Footprint Right Angle Bend | Receptacle

Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend with Machined Contacts .090(2.29mm) Contact Spacing 0.078(1.98mm) Row Spacing Plug and Receptacle in 15, 26, 44 or 62 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination M

EDAC

亚得电子

634-SERIES

634 Series D-Sub Connectors | High Density Three Contact Rows with .350(8.89mm) Footprint RightAngle Bend | Receptacle

Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend Standard Contact Spacing and Row Spacing Optional 9th pin recessed on 15 Contact Size in accordance with VESA Display Data Channel Standard Plug and Receptacle in 15, 26, 44, 62 or 78 Contact Sizes

EDAC

亚得电子

634

Low Frequencies

文件：141.01 Kbytes Page：2 Pages

OSCILENT

634HHU

DC axial fans

文件：249.79 Kbytes Page：1 Pages

EBMPAPST

依必安派特

IRF634NS产品属性

  • 类型

    描述

  • 型号

    IRF634NS

  • 功能描述

    MOSFET N-Chan 250V 8.0 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF634NS供应商更多...

更新时间：2026-1-2 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市胜彬电子有限公司
IRF634NS
IR
22+
TO-263
8000
原装正品支持实单
询价
深圳市一线半导体有限公司
IRF634NS
IR
24+
D2-Pak
8866
询价
深圳市昌和盛利电子有限公司
IRF634NS
IR
NEW
TO-263
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市宏捷佳电子科技有限公司
IRF634NS
IR
2023+
D2-PAK
50000
原装现货
询价
深圳市安富世纪电子有限公司
IRF634NS
IR
23+
D2-PAK
7300
专注配单,只做原装进口现货
询价
天津市博通航睿技术有限公司
IRF634NSTRR
IR
23+
7000
询价
深圳市创新迹电子有限公司
IRF634NSPBF
IR
22+
TO-263
20000
公司只做原装 品质保障
询价
深圳市能元时代电子有限公司
IRF634NSPBF
IR
23+
TO-263
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市威雅利发展有限公司
IRF634NSF634NS
IR
1922+
TO-263
367
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市勤思达科技有限公司
IRF634NS
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价

IRF634NS芯片相关品牌

IRF634NS规格书下载地址

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