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IRF634NS中文资料
IRF634NS数据手册规格书PDF详情
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
IRF634NS产品属性
- 类型
描述
- 型号
IRF634NS
- 功能描述
MOSFET N-Chan 250V 8.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
IR |
05+ |
原厂原装 |
1001 |
只做全新原装真实现货供应 |
|||
IR |
24+ |
D2-Pak |
8866 |
||||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
NEXPERIA/安世 |
23+ |
SOT223 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
IR |
23+ |
D2-PAK |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
21+ |
D2-PAK |
10000 |
原装现货假一罚十 |
|||
IR |
2022+ |
D2-PAK |
5325 |
原厂代理 终端免费提供样品 |
|||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
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IRF634NS 芯片相关型号
Datasheet数据表PDF页码索引
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