位置:首页 > IC中文资料第5771页 > IRF634A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF634A | Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.327Ω(Typ.) | FAIRCHILD 仙童半导体 | ||
IRF634A | Advanced N-CHANNEL Power MOSFET FEATURES\n♦ Avalanche Rugged Technology\n♦ Rugged Gate Oxide Technology\n♦ Lower Input Capacitance\n♦ Improved Gate Charge\n♦ Extended Safe Operating Area\n♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V\n♦ Lower RDS(ON): 0.327Ω(Typ.) ♦ Avalanche Rugged Technology\n♦ Rugged Gate Oxide Technology\n♦ Lower Input Capacitance\n♦ Improved Gate Charge\n♦ Extended Safe Operating Area\n♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V\n♦ Lower RDS(ON): 0.327Ω(Typ.); | ONSEMI 安森美半导体 | ||
IRF634A | Advanced Power MOSFET 文件:353.28 Kbytes Page:6 Pages | ARTSCHIP | ||
IRF634A | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
IRF634A | isc N-Channel MOSFET Transistor 文件:281.1 Kbytes Page:2 Pages | ISC 无锡固电 | ||
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半导体 | |||
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半导体 | |||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | |||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | |||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 |
IRF634A产品属性
- 类型
描述
- 型号
IRF634A
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
Advanced Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
IR |
26+ |
TO-220 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FSC |
25+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
|||
IR |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAIRCHILD |
201+ |
T0-220 |
961 |
全新 发货1-2天 |
|||
FAIRCHILD |
05+ |
原厂原装 |
4447 |
只做全新原装真实现货供应 |
|||
FAIRCHILD/仙童 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
FSC |
最新 |
TO-220 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
FCS |
25+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
FAIRCHILD/仙童 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
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DdatasheetPDF页码索引
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