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IRF634A

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.327Ω(Typ.)

FAIRCHILD

仙童半导体

IRF634A

Advanced N-CHANNEL Power MOSFET

FEATURES\n♦ Avalanche Rugged Technology\n♦ Rugged Gate Oxide Technology\n♦ Lower Input Capacitance\n♦ Improved Gate Charge\n♦ Extended Safe Operating Area\n♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V\n♦ Lower RDS(ON): 0.327Ω(Typ.) ♦ Avalanche Rugged Technology\n♦ Rugged Gate Oxide Technology\n♦ Lower Input Capacitance\n♦ Improved Gate Charge\n♦ Extended Safe Operating Area\n♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V\n♦ Lower RDS(ON): 0.327Ω(Typ.);

ONSEMI

安森美半导体

IRF634A

Advanced Power MOSFET

文件:353.28 Kbytes Page:6 Pages

ARTSCHIP

IRF634A

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

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IRF634A

isc N-Channel MOSFET Transistor

文件:281.1 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

STMICROELECTRONICS

意法半导体

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

IRF634A产品属性

  • 类型

    描述

  • 型号

    IRF634A

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    Advanced Power MOSFET

更新时间:2026-5-18 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
25+
NA
880000
明嘉莱只做原装正品现货
IR
26+
TO-220
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
FSC
25+
TO220
30000
代理全新原装现货,价格优势
IR
25+
TO-220
4500
全新原装、诚信经营、公司现货销售
FAIRCHILD
201+
T0-220
961
全新 发货1-2天
FAIRCHILD
05+
原厂原装
4447
只做全新原装真实现货供应
FAIRCHILD/仙童
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
FSC
最新
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
FCS
25+
TO-220
27500
原装正品,价格最低!
FAIRCHILD/仙童
22+
TO-220
6000
十年配单,只做原装

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