位置：首页 > IC中文资料第860页 > IRF634N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF634N | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF |   | |
IRF634N | Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | |
IRF634N | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
HEXFET® Power MOSFET | Infineon 英飞凌 | | ||
T-1 Subminiature Lamps T-1¼ Subminiature Lamps | GILWAY | | ||
634M Series D-Sub Connectors | Machined Pins | High Density Three Contact Rows with 0.350 (8.89mm) Footprint Right Angle Bend | Receptacle Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend with Machined Contacts .090(2.29mm) Contact Spacing 0.078(1.98mm) Row Spacing Plug and Receptacle in 15, 26, 44 or 62 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination M | EDAC 亚得电子 | | ||
634 Series D-Sub Connectors | High Density Three Contact Rows with .350(8.89mm) Footprint RightAngle Bend | Receptacle Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend Standard Contact Spacing and Row Spacing Optional 9th pin recessed on 15 Contact Size in accordance with VESA Display Data Channel Standard Plug and Receptacle in 15, 26, 44, 62 or 78 Contact Sizes | EDAC 亚得电子 | | ||
Low Frequencies 文件：141.01 Kbytes Page：2 Pages | OSCILENT | | ||
DC axial fans 文件：249.79 Kbytes Page：1 Pages | EBMPAPST 依必安派特 | |
IRF634N产品属性
- 类型
描述
- 型号
IRF634N
- 功能描述
MOSFET N-Chan 250V 8.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
VISHAY/威世 |
11+ |
TO-220 |
11000 |
||||
IR |
23+ |
TO-220 |
35890 |
||||
VISHAY/威世 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
25+23+ |
TO-220 |
27729 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
24+ |
TO-220 |
11000 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-220AB |
8866 |
||||
原装正品 |
23+ |
TO-220 |
55005 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR/VISHAY |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IRF634N芯片相关品牌
IRF634N规格书下载地址
IRF634N参数引脚图相关
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2019-4-27IRF630N
原装正品现货价格优惠
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IRF630N
2019-3-25
DdatasheetPDF页码索引
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