位置：首页 > IC中文资料第860页 > IRF634N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF634N | Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF |   | |
IRF634N | Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | |
IRF634N | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well kn | IRF | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET | Infineon 英飞凌 | | ||
HEXFET® Power MOSFET | Infineon 英飞凌 | | ||
T-1 Subminiature Lamps T-1¼ Subminiature Lamps | GILWAY | | ||
634M Series D-Sub Connectors | Machined Pins | High Density Three Contact Rows with 0.350 (8.89mm) Footprint Right Angle Bend | Receptacle Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend with Machined Contacts .090(2.29mm) Contact Spacing 0.078(1.98mm) Row Spacing Plug and Receptacle in 15, 26, 44 or 62 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination M | EDAC 亚得电子 | | ||
634 Series D-Sub Connectors | High Density Three Contact Rows with .350(8.89mm) Footprint RightAngle Bend | Receptacle Features High Density Three Contact Rows with .350(8.89mm) Footprint Right Angle Bend Standard Contact Spacing and Row Spacing Optional 9th pin recessed on 15 Contact Size in accordance with VESA Display Data Channel Standard Plug and Receptacle in 15, 26, 44, 62 or 78 Contact Sizes | EDAC 亚得电子 | | ||
Low Frequencies 文件：141.01 Kbytes Page：2 Pages | OSCILENT | | ||
DC axial fans 文件：249.79 Kbytes Page：1 Pages | EBMPAPST 依必安派特 | |
IRF634N产品属性
- 类型
描述
- 型号
IRF634N
- 功能描述
MOSFET N-Chan 250V 8.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4411 |
原装现货,当天可交货,原型号开票 |
|||
IR/VISHAY |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
1922+ |
TO-263 |
367 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
11+ |
TO-220 |
11000 |
||||
IR |
25+23+ |
TO-220 |
27729 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
24+ |
TO-220AB |
8866 |
IRF634N规格书下载地址
IRF634N参数引脚图相关
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- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRF645
- IRF644S
- IRF644N
- IRF644B
- IRF644A
- IRF644
- IRF643
- IRF642
- IRF641
- IRF640T
- IRF640S
- IRF640N
- IRF640L
- IRF640B
- IRF640A
- IRF640_R4941
- IRF640/D
- IRF640,127
- IRF640
- IRF637
- IRF636
- IRF635
- IRF634STRRPBF
- IRF634STRR
- IRF634STRLPBF
- IRF634STRL
- IRF634SPBF
- IRF634S
- IRF634PBF
- IRF634NSTRRPBF
- IRF634NSTRLPBF
- IRF634NSPBF
- IRF634NS
- IRF634NPBF
- IRF634NLPBF
- IRF634NL
- IRF634L
- IRF634FP
- IRF634B_FP001
- IRF634B
- IRF634A
- IRF-634
- IRF634
- IRF633
- IRF632R
- IRF632
- IRF631R
- IRF63193
- IRF631
- IRF630STRRPBF
- IRF630STRR
- IRF630STRLPBF
- IRF630STRL
- IRF630ST4
- IRF630SPBF
- IRF630S
- IRF630R
- IRF630N
- IRF630M
- IRF630F
- IRF630B
- IRF630A
- IRF630
- IRF627
- IRF626
- IRF625
- IRF624S
- IRF624B
- IRF624A
IRF634N数据表相关新闻
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-27IRF630N
原装正品现货价格优惠
2019-3-25IRF630N
IRF630N
2019-3-25
DdatasheetPDF页码索引
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