位置:首页 > IC中文资料第860页 > IRF634B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF634B | 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | FAIRCHILD 仙童半导体 | ||
IRF634B | 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | KERSEMI | ||
IRF634B | POWER MOSFET | SUNTAC | ||
IRF634B | 分立式 MOSFET | ONSEMI 安森美半导体 | ||
IRF634B | isc N-Channel MOSFET Transistor 文件:281.1 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRF634B | POWER MOSFET 文件:135.5 Kbytes Page:6 Pages | SUNTAC | ||
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半导体 | |||
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半导体 | |||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | |||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | |||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 |
IRF634B产品属性
- 类型
描述
- 型号
IRF634B
- 功能描述
MOSFET 250V Single
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-220-3 |
22360 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
TO-220-3 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD |
2016+ |
TO-220 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD |
20+ |
TO-2203L |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ST |
25+ |
NA |
20000 |
原装,请咨询 |
|||
FAIRCHILD |
23+ |
TO-220-3 |
59404 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
FAIRCHI |
17+ |
TO220 |
60000 |
保证原装进口现货可开17%增值税发票 |
|||
FAIRCHILD/仙童 |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
IRF634B芯片相关品牌
IRF634B规格书下载地址
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DdatasheetPDF页码索引
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