Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

MOSFET P 55V 74A 0.02 OHM

文件：695.2 Kbytes Page：8 Pages

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Advanced Process Technology

文件：720.64 Kbytes Page：8 Pages

P-Channel MOSFET Transistor

文件：335.22 Kbytes Page：2 Pages

isc N-Channel Mosfet Transistor

文件：65.75 Kbytes Page：2 Pages

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

HEXFET Power MOSFET

VDSS = -55V RDS(on) = 20mΩ ID = -42A Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety o

-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=-74A@ TC=25℃ ·Drain Source Voltage -VDSS= -550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=-74A@ TC=25℃ ·Drain Source Voltage -VDSS= -550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

HEXFET Power MOSFET

VDSS = -55V RDS(on) = 20mΩ ID = -42A Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety o

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

-60V P-Channel MOSFET

Features * Advanced Process Technology * Ultra Low On-Resistance * 150°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax * Some Parameters Are Differrent from IRF4905S * VDS (V) = -60V * ID = -42A (VGS = -10V) RDS(ON)

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

P-Channel MOSFET Transistor

文件：335.22 Kbytes Page：2 Pages

isc P-Channel MOSFET Transistor

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-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-262 封装

P-Channel 60-V (D-S) MOSFET

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HEXFET Power MOSFET

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Advanced Process Technology

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Advanced Process Technology

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-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Advanced Process Technology

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HEXFET짰 Power MOSFET

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Advanced Process Technology

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VHB™ Tape Specialty Tapes

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Adjustable RF Inductors

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VHB Tape - Specialty Tapes

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Adjustable RF Inductors

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Advanced Planar Technology Low On-Resistance

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