Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=-74A@ TC=25℃ ·Drain Source Voltage -VDSS= -550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=-74A@ TC=25℃ ·Drain Source Voltage -VDSS= -550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Advanced Process Technology

文件：174.08 Kbytes Page：11 Pages

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

HEXFET Power MOSFET

VDSS = -55V RDS(on) = 20mΩ ID = -42A Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety o

-60V P-Channel MOSFET

Features * Advanced Process Technology * Ultra Low On-Resistance * 150°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax * Some Parameters Are Differrent from IRF4905S * VDS (V) = -60V * ID = -42A (VGS = -10V) RDS(ON)

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

Advanced Process Technology

文件：366.79 Kbytes Page：12 Pages

HEXFET짰 Power MOSFET

文件：366.79 Kbytes Page：12 Pages

Advanced Process Technology

文件：174.08 Kbytes Page：11 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages

VHB™ Tape Specialty Tapes

文件：533.41 Kbytes Page：9 Pages

VHB Tape - Specialty Tapes

文件：735.51 Kbytes Page：9 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages

Advanced Planar Technology Low On-Resistance

文件：277.63 Kbytes Page：11 Pages