Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

isc P-Channel MOSFET Transistor

文件：273.46 Kbytes Page：2 Pages

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-262 封装

HEXFET Power MOSFET

VDSS = -55V RDS(on) = 20mΩ ID = -42A Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety o

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VHB™ Tape Specialty Tapes

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Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages

Adjustable RF Inductors

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Advanced Planar Technology Low On-Resistance

文件：277.63 Kbytes Page：11 Pages