AUIRF4905价格

参考价格:¥7.3493

型号:AUIRF4905 品牌:INTERNATIONAL 备注:这里有AUIRF4905多少钱,2025年最近7天走势,今日出价,今日竞价,AUIRF4905批发/采购报价,AUIRF4905行情走势销售排行榜,AUIRF4905报价。
型号 功能描述 生产厂家&企业 LOGO 操作
AUIRF4905

Advanced Planar Technology Low On-Resistance

文件:277.63 Kbytes Page:11 Pages

IRF

AUIRF4905

Advanced Planar Technology

文件:352.97 Kbytes Page:9 Pages

Infineon

英飞凌

Advanced Planar Technology P-Channel MOSFET

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Infineon

英飞凌

Advanced Planar Technology P-Channel MOSFET

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Infineon

英飞凌

Advanced Planar Technology P-Channel MOSFET

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

Advanced Planar Technology P-Channel MOSFET

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

Adjustable RF Inductors

文件:29.55 Kbytes Page:1 Pages

Bourns

伯恩斯

VHB Tape - Specialty Tapes

文件:735.51 Kbytes Page:9 Pages

3M

Adjustable RF Inductors

文件:29.55 Kbytes Page:1 Pages

Bourns

伯恩斯

AUIRF4905产品属性

  • 类型

    描述

  • 型号

    AUIRF4905

  • 功能描述

    MOSFET AUTO -55V 1 P-CH HEXFET 20mOhms

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-9 21:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
25+
SMD
518000
明嘉莱只做原装正品现货
INFINEON/英飞凌
22+
TO-263
100000
代理渠道/只做原装/可含税
IR
25+
TO-263
28800
原装正品,欢迎来电咨询!
IR
25+
TO-263
32360
IR全新特价AUIRF4905S即刻询购立享优惠#长期有货
Infineon
24+
TO-263
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
INFINEON
23+
D2PAK-3
36000
英博尔原装优质现货订货渠道商
INFINEON
22+
NA
30000
原装正品支持实单
IR
23+
TO-263
8000
专注配单,只做原装进口现货
Infineon/英飞凌
23+
D2PAK
25630
原装正品
IR(国际整流器)
24+
N/A
7348
原厂可订货,技术支持,直接渠道。可签保供合同

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