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AUIRF4905价格
参考价格：￥7.3493
型号：AUIRF4905 品牌：INTERNATIONAL 备注：这里有AUIRF4905多少钱，2026年最近7天走势，今日出价，今日竞价，AUIRF4905批发/采购报价，AUIRF4905行情走势销售排行榜，AUIRF4905报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AUIRF4905 | Advanced Planar Technology Low On-Resistance 文件：277.63 Kbytes Page：11 Pages | IRF |   | |
AUIRF4905 | Advanced Planar Technology 文件：352.97 Kbytes Page：9 Pages | Infineon 英飞凌 | | |
AUIRF4905 | 汽车 Q101-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | |
Advanced Planar Technology P-Channel MOSFET Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
Advanced Planar Technology Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | Infineon 英飞凌 | | ||
Advanced Planar Technology P-Channel MOSFET Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
Advanced Planar Technology Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | Infineon 英飞凌 | | ||
Advanced Planar Technology P-Channel MOSFET Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
Advanced Planar Technology P-Channel MOSFET Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
汽车 Q101-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-262 封装 | Infineon 英飞凌 | | ||
汽车 Q101-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | Infineon 英飞凌 | | ||
VHB™ Tape Specialty Tapes 文件：533.41 Kbytes Page：9 Pages | 3M | | ||
Adjustable RF Inductors 文件：29.55 Kbytes Page：1 Pages | Bourns 伯恩斯 | | ||
VHB Tape - Specialty Tapes 文件：735.51 Kbytes Page：9 Pages | 3M | | ||
Adjustable RF Inductors 文件：29.55 Kbytes Page：1 Pages | Bourns 伯恩斯 | |
AUIRF4905产品属性
- 类型
描述
- 型号
AUIRF4905
- 功能描述
MOSFET AUTO -55V 1 P-CH HEXFET 20mOhms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
TO-220 |
30000 |
原装正品公司现货,假一赔十! |
|||
IR |
25+ |
TO-220 |
22500 |
原装正品,欢迎来电咨询! |
|||
INFINEON |
23+ |
D2PAK-3 |
36000 |
英博尔原装优质现货订货渠道商 |
|||
INFINEON |
25+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
IR(国际整流器) |
24+ |
N/A |
7348 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
Infineon/英飞凌 |
21+ |
TO-220 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
24+ |
TO-262 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
24+ |
TO-220 |
20000 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
INFINEON |
24+ |
con |
178 |
现货常备产品原装可到京北通宇商城查价格 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
AUIRF4905规格书下载地址
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2020-1-11
DdatasheetPDF页码索引
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