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AUIRF4905价格
参考价格：￥7.3493
型号：AUIRF4905 品牌：INTERNATIONAL 备注：这里有AUIRF4905多少钱，2025年最近7天走势，今日出价，今日竞价，AUIRF4905批发/采购报价，AUIRF4905行情走势销售排行榜，AUIRF4905报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AUIRF4905 | Advanced Planar Technology Low On-Resistance 文件：277.63 Kbytes Page：11 Pages | IRF |   | |
AUIRF4905 | Advanced Planar Technology 文件：352.97 Kbytes Page：9 Pages | Infineon 英飞凌 | | |
AUIRF4905 | 汽车 Q101-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | |
Advanced Planar Technology P-Channel MOSFET Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
Advanced Planar Technology Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | Infineon 英飞凌 | | ||
Advanced Planar Technology P-Channel MOSFET Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
Advanced Planar Technology Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | Infineon 英飞凌 | | ||
Advanced Planar Technology P-Channel MOSFET Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
Advanced Planar Technology P-Channel MOSFET Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
汽车 Q101-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-262 封装 | Infineon 英飞凌 | | ||
汽车 Q101-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | Infineon 英飞凌 | | ||
VHB™ Tape Specialty Tapes 文件：533.41 Kbytes Page：9 Pages | 3M | | ||
Adjustable RF Inductors 文件：29.55 Kbytes Page：1 Pages | Bourns 伯恩斯 | | ||
VHB Tape - Specialty Tapes 文件：735.51 Kbytes Page：9 Pages | 3M | | ||
Adjustable RF Inductors 文件：29.55 Kbytes Page：1 Pages | Bourns 伯恩斯 | |
AUIRF4905产品属性
- 类型
描述
- 型号
AUIRF4905
- 功能描述
MOSFET AUTO -55V 1 P-CH HEXFET 20mOhms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
60000 |
||||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Infineon |
24+ |
TO-263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
IR |
24+ |
TO-263 |
9600 |
原装现货,优势供应,支持实单! |
|||
IR |
24+ |
TO-263 |
43200 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
2410+ |
SOP |
9000 |
十年芯路!只做原装!一直起卖! |
|||
INFINE0N |
21+ |
D2PAK |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
Infineon/英飞凌 |
24+ |
D2PAK |
25000 |
原装正品,假一赔十! |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
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AUIRF4905规格书下载地址
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2020-1-11
DdatasheetPDF页码索引
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