IRF2807价格
参考价格：￥11.3555
型号：IRF2807HR 品牌：International Rectifier 备注：这里有IRF2807多少钱，2026年最近7天走势，今日出价，今日竞价，IRF2807批发/采购报价，IRF2807行情走势销售排行榜，IRF2807报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF2807 | Power MOSFET(Vdss=75V, Id=82A?? Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF |   | |
IRF2807 | Advanced Process Technology Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te | KERSEMI | | |
IRF2807 | 采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET \n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n \n ; | INFINEON 英飞凌 | | |
IRF2807 | N-Channel MOSFET Transistor 文件：338.77 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF2807 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Advanced Process Technology Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de | KERSEMI | | ||
Advanced Process Technology Ultra Low On-Resistance Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | KERSEMI | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
采用 D2-Pak 封装的 75V 单 N 沟道功率 MOSFET \n优势:\n• RoHS Compliant\n• Low RDS(on)\n• Industry-leading quality\n• Dynamic dv/dt Rating\n• Fast Switching\n• Fully Avalanche Rated\n• 175°C Operating Temperature; | INFINEON 英飞凌 | | ||
Advanced Process Technology Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de | KERSEMI | | ||
Advanced Process Technology Ultra Low On-Resistance Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | KERSEMI | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET \n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ; | INFINEON 英飞凌 | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET (75V, 94mOHM, 75A) Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb | IRF | | ||
AUTOMOTIVE MOSFET (75V, 94mOHM, 75A) Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
AUTOMOTIVE MOSFET (75V, 94mOHM, 75A) Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb | IRF | | ||
Advanced Process Technology 文件：133.54 Kbytes Page：11 Pages | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：300.39 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：3.08673 Mbytes Page：8 Pages | KERSEMI | | ||
Advanced Process Technology 文件：192.22 Kbytes Page：8 Pages | IRF | | ||
Advanced Process Technology 文件：239.57 Kbytes Page：8 Pages | IRF | | ||
Advanced Process Technology 文件：133.54 Kbytes Page：11 Pages | IRF | | ||
丝印代码：D2PAK；Isc N-Channel MOSFET Transistor 文件：189.1 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：278.55 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：133.54 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：279.61 Kbytes Page：13 Pages | IRF | | ||
N-Channel MOSFET Transistor 文件：340.21 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor 文件：301.04 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：279.61 Kbytes Page：13 Pages | IRF | | ||
Advanced Process Technology 文件：405.08 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：405.08 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：405.08 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：405.08 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：279.61 Kbytes Page：13 Pages | IRF | | ||
丝印代码：D2PAK；Isc N-Channel MOSFET Transistor 文件：189.76 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：405.08 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：279.61 Kbytes Page：13 Pages | IRF | | ||
Advanced Process Technology 文件：405.08 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：405.08 Kbytes Page：12 Pages | IRF | | ||
Earth Leakage Detector Description The KA2807 is a IC for ground fault circuit interrupters which are intended to provide an electrical shock hazard protection from line to ground fault currents on grounded circuits of 120V supplies. Features • Full Advantage of the UL943 • Built-In Voltage Regulator • Sense Coil: | FAIRCHILD 仙童半导体 | | ||
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, | NEC 瑞萨 | | ||
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, | NEC 瑞萨 | | ||
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, | NEC 瑞萨 | | ||
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, | NEC 瑞萨 | |
IRF2807产品属性
- 类型
描述
- OPN：
IRF2807PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
75 V
- RDS (on) @10V max：
13 mΩ
- ID @25°C max：
82 A
- QG typ @10V：
106.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/INFINEON |
25+ |
TO-263 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
10000 |
原装现货可持续供货 |
|||
IR |
25+ |
TO-220 |
28855 |
保证进口原装现货假一赔十 |
|||
INFINEON/英飞凌 |
21+ |
TO-220 |
14820 |
原装现货 |
|||
Infineon(英飞凌) |
25+ |
D2PAK |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
INFINEON |
21+ |
SMD |
16230 |
十年信誉,只做原装,有挂就有现货! |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32000 |
INFINEON/英飞凌全新特价IRF2807PBF即刻询购立享优惠#长期有货 |
|||
IR(原装正品) |
23+ |
TO-220 |
65400 |
||||
INFINEON |
24+ |
TO-220 |
60000 |
原装现正品可看现货 |
|||
IR |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
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IRF2807规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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