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位置：首页 > IC中文资料第77页 > IRF2807

IRF2807价格

参考价格：￥11.3555

型号：IRF2807HR 品牌：International Rectifier 备注：这里有IRF2807多少钱，2026年最近7天走势，今日出价，今日竞价，IRF2807批发/采购报价，IRF2807行情走势销售排行榜，IRF2807报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2807

Power MOSFET(Vdss=75V, Id=82A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

KERSEMI

IRF2807

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

INFINEON

英飞凌

IRF2807

N-Channel MOSFET Transistor

文件：338.77 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807L

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807LPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRF2807LPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807S

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807S

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807S

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807SPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRF2807SPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZL

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZLPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZS

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZSPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807L

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807L

Isc N-Channel MOSFET Transistor

文件：300.39 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807PBF

Advanced Process Technology

文件：3.08673 Mbytes Page：8 Pages

KERSEMI

IRF2807PBF

Advanced Process Technology

文件：192.22 Kbytes Page：8 Pages

IRF

IRF2807PBF_15

Advanced Process Technology

文件：239.57 Kbytes Page：8 Pages

IRF

IRF2807S

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807S

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.1 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807S

采用 D2-Pak 封装的 75V 单 N 沟道功率 MOSFET

INFINEON

英飞凌

IRF2807SPBF_15

Advanced Process Technology

文件：278.55 Kbytes Page：11 Pages

IRF

IRF2807STRLPBF

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807Z

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807Z

N-Channel MOSFET Transistor

文件：340.21 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807Z

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

INFINEON

英飞凌

IRF2807ZL

Isc N-Channel MOSFET Transistor

文件：301.04 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF_15

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZS

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZS

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZSPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZSTRLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRRPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

KA2807D

Earth Leakage Detector

Description The KA2807 is a IC for ground fault circuit interrupters which are intended to provide an electrical shock hazard protection from line to ground fault currents on grounded circuits of 120V supplies. Features • Full Advantage of the UL943 • Built-In Voltage Regulator • Sense Coil:

FAIRCHILD

仙童半导体

UPC2807

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807A

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807AW

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807W

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

IRF2807产品属性

  • 类型

    描述

  • 型号

    IRF2807

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

  • 制造商

    International Rectifier

  • 功能描述

    Single N-Channel 75 V 230 W 160 nC Hexfet Power Mosfet Flange Mount - TO-220AB

IRF2807供应商更多...

更新时间：2026-3-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
上海意淼电子科技有限公司
IRF2807
IR
23+
TO220
6500
全新原装假一赔十
询价
深圳市赛尔通科技有限公司
IRF2807
IR
23+
65480
询价
深圳市福田区绿盛电子商行
IRF2807
IR
2015+
TO220
19898
专业代理原装现货,特价热卖!
询价
深圳市富利微电子科技有限公司
IRF2807PBF
IR
25+
TO-220
28855
保证进口原装现货假一赔十
询价
千层芯半导体(深圳)有限公司
IRF2807
IR
24+
SMD
20000
一级代理原装现货假一罚十
询价
深圳市振宏微科技有限公司
IRF2807
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市胜彬电子有限公司
IRF2807
FAIRCILD
22+
TO220
8000
原装正品支持实单
询价
深圳市恒达亿科技有限公司
IRF2807
IR
25+
TO220
3000
全新原装、诚信经营、公司现货销售
询价
深圳市中联芯电子有限公司
IRF2807PBF
IR
24+
TO-220
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
深圳市拓亿芯电子有限公司
IRF2807
IR
25+
TO-220
30000
代理全新原装现货,价格优势
询价

IRF2807芯片相关品牌

IRF2807规格书下载地址

IRF2807参数引脚图相关

IRF2807数据表相关新闻

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