您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第77页 > IRF2807

IRF2807价格

参考价格：￥11.3555

型号：IRF2807HR 品牌：International Rectifier 备注：这里有IRF2807多少钱，2026年最近7天走势，今日出价，今日竞价，IRF2807批发/采购报价，IRF2807行情走势销售排行榜，IRF2807报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2807

Power MOSFET(Vdss=75V, Id=82A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

KERSEMI

IRF2807

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF2807

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF2807

N-Channel MOSFET Transistor

文件：338.77 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807L

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807LPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807LPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRF2807S

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807S

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807S

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807SPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807SPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRF2807Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZL

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZLPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZS

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZSPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807L

Isc N-Channel MOSFET Transistor

文件：300.39 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807L

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807PBF

Advanced Process Technology

文件：3.08673 Mbytes Page：8 Pages

KERSEMI

IRF2807PBF

Advanced Process Technology

文件：192.22 Kbytes Page：8 Pages

IRF

IRF2807PBF_15

Advanced Process Technology

文件：239.57 Kbytes Page：8 Pages

IRF

IRF2807S

采用 D2-Pak 封装的 75V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF2807S

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807S

Isc N-Channel MOSFET Transistor

文件：189.1 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807SPBF_15

Advanced Process Technology

文件：278.55 Kbytes Page：11 Pages

IRF

IRF2807STRLPBF

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807Z

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807Z

N-Channel MOSFET Transistor

文件：340.21 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807Z

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF2807ZL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZL

Isc N-Channel MOSFET Transistor

文件：301.04 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF_15

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZS

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZS

Isc N-Channel MOSFET Transistor

文件：189.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZSPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZSTRLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRRPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

2807

60 MHz surface mount bandpass filter

General Description KR 2807 is a 60 MHz surface mount bandpass filter. The filter has a 3 dB bandwidth of 9 MHz ± 1 MHz. Other center frequencies and bandwidths available. Please consult the factory. Features • Surface Mount Package • Sharp Transition to Stopband • >40 dB Stopband • 50 Ω Sou

KR

2807

Mini-Node CATV Optical Receiver

Mini-Node CATV Optical Receiver The 2807 Mini-Node CATV Optical Receiver, working with either the 2804 PDS or 2805 PNS transmitter, provides CATV distribution head end operators with an extensive array of features that offer a low-cost solution to increase system performance. The receiver provide

EMCORE

Emcore Corporation

2807NA-SFAP

Mini-Node CATV Optical Receiver

Mini-Node CATV Optical Receiver The 2807 Mini-Node CATV Optical Receiver, working with either the 2804 PDS or 2805 PNS transmitter, provides CATV distribution head end operators with an extensive array of features that offer a low-cost solution to increase system performance. The receiver provide

EMCORE

Emcore Corporation

2807

Shorty Bushings

文件：102.78 Kbytes Page：1 Pages

Heyco

2807N

150A竊?5V N-CHANNEL MOSFET

文件：378.76 Kbytes Page：7 Pages

KIA

可易亚半导体

IRF2807产品属性

  • 类型

    描述

  • 型号

    IRF2807

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

  • 制造商

    International Rectifier

  • 功能描述

    Single N-Channel 75 V 230 W 160 nC Hexfet Power Mosfet Flange Mount - TO-220AB

IRF2807供应商更多...

更新时间：2025-12-31 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
上海意淼电子科技有限公司
IRF2807
IR
23+
TO220
6500
全新原装假一赔十
询价
深圳市威雅利发展有限公司
IRF2807
IOR
11+
TO220
25
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市金芯世纪电子有限公司
IRF2807
IR/VISHAY
22+
TO-220
100000
代理渠道/只做原装/可含税
询价
中天科工半导体（深圳）有限公司
IRF2807PBF
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF2807PBF即刻询购立享优惠#长期有货
询价
千层芯半导体(深圳)有限公司
IRF2807
IR
24+
SMD
20000
一级代理原装现货假一罚十
询价
深圳市恒达亿科技有限公司
IRF2807
IR
25+
TO220
3000
全新原装、诚信经营、公司现货销售
询价
深圳市福田区绿盛电子商行
IRF2807
IR
2015+
TO220
19898
专业代理原装现货,特价热卖!
询价
深圳市振宏微科技有限公司
IRF2807
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市赛尔通科技有限公司
IRF2807
IR
23+
65480
询价
深圳市胜彬电子有限公司
IRF2807
FAIRCILD
22+
TO220
8000
原装正品支持实单
询价

IRF2807芯片相关品牌

IRF2807规格书下载地址

IRF2807参数引脚图相关

IRF2807数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2026 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示