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位置：首页 > IC中文资料第77页 > IRF2807

IRF2807价格

参考价格：￥11.3555

型号：IRF2807HR 品牌：International Rectifier 备注：这里有IRF2807多少钱，2025年最近7天走势，今日出价，今日竞价，IRF2807批发/采购报价，IRF2807行情走势销售排行榜，IRF2807报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2807

Power MOSFET(Vdss=75V, Id=82A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

KERSEMI

IRF2807

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

IRF2807

N-Channel MOSFET Transistor

文件：338.77 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

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IRF2807L

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807LPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807LPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRF2807S

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807S

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807S

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807SPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807SPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRF2807Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZL

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZLPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZS

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZSPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807L

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807L

Isc N-Channel MOSFET Transistor

文件：300.39 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807PBF

Advanced Process Technology

文件：192.22 Kbytes Page：8 Pages

IRF

IRF2807PBF

Advanced Process Technology

文件：3.08673 Mbytes Page：8 Pages

KERSEMI

IRF2807PBF_15

Advanced Process Technology

文件：239.57 Kbytes Page：8 Pages

IRF

IRF2807S

Isc N-Channel MOSFET Transistor

文件：189.1 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807S

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807S

采用 D2-Pak 封装的 75V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF2807SPBF_15

Advanced Process Technology

文件：278.55 Kbytes Page：11 Pages

IRF

IRF2807STRLPBF

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807Z

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807Z

N-Channel MOSFET Transistor

文件：340.21 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807Z

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF2807ZL

Isc N-Channel MOSFET Transistor

文件：301.04 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF_15

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZS

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZS

Isc N-Channel MOSFET Transistor

文件：189.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZSPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZSTRLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRRPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

2807

Mini-Node CATV Optical Receiver

Mini-Node CATV Optical Receiver The 2807 Mini-Node CATV Optical Receiver, working with either the 2804 PDS or 2805 PNS transmitter, provides CATV distribution head end operators with an extensive array of features that offer a low-cost solution to increase system performance. The receiver provide

EMCORE

Emcore Corporation

2807

60 MHz surface mount bandpass filter

General Description KR 2807 is a 60 MHz surface mount bandpass filter. The filter has a 3 dB bandwidth of 9 MHz ± 1 MHz. Other center frequencies and bandwidths available. Please consult the factory. Features • Surface Mount Package • Sharp Transition to Stopband • >40 dB Stopband • 50 Ω Sou

KR

2807NA-SFAP

Mini-Node CATV Optical Receiver

Mini-Node CATV Optical Receiver The 2807 Mini-Node CATV Optical Receiver, working with either the 2804 PDS or 2805 PNS transmitter, provides CATV distribution head end operators with an extensive array of features that offer a low-cost solution to increase system performance. The receiver provide

EMCORE

Emcore Corporation

2807

Shorty Bushings

文件：102.78 Kbytes Page：1 Pages

Heyco

2807N

150A竊?5V N-CHANNEL MOSFET

文件：378.76 Kbytes Page：7 Pages

KIA

可易亚半导体

IRF2807产品属性

  • 类型

    描述

  • 型号

    IRF2807

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

  • 制造商

    International Rectifier

  • 功能描述

    Single N-Channel 75 V 230 W 160 nC Hexfet Power Mosfet Flange Mount - TO-220AB

IRF2807供应商更多...

更新时间：2025-9-23 18:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市弘扬芯城科技有限公司
IRF2807ZPBF
Infineon(英飞凌)
2024+
TO-220-3
500000
诚信服务,绝对原装原盘
询价
深圳市恒达亿科技有限公司
IRF2807SPBF
IR
25+
TO-263
4500
全新原装、诚信经营、公司现货销售
询价
深圳市冠亿通科技有限公司
IRF2807ZPBFMOS(场效应管)
INFINEON/英飞凌
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
瑞航达科技(深圳)有限公司
IRF2807S
最新
2000
原装正品现货
询价
谛辉(北京/上海/青岛 )电子科技有限公司
IRF2807PBF
IR
25+
TO-220
18000
原厂直接发货进口原装
询价
深圳市星宇佳科技有限公司
IRF2807STRLPBF
INFINEON/英飞凌
21+
TO-263
4800
询价
深圳市润联芯城科技有限公司
IRF2807STRLPBF
INFINEON/英飞凌
22+
TO-263
25800
原装正品支持实单
询价
深圳市明嘉莱科技有限公司
IRF2807PBF
IR
25+
ROHS
880000
明嘉莱只做原装正品现货
询价
深圳市凯睿晟科技有限公司
IRF2807STRPBF
IR
21+
TO-263
30000
百域芯优势 实单必成 可开13点增值税
询价
深圳市振宏微科技有限公司
IRF2807
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价

IRF2807芯片相关品牌

IRF2807规格书下载地址

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