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位置：首页 > IC中文资料第77页 > IRF2807

IRF2807价格

参考价格：￥11.3555

型号：IRF2807HR 品牌：International Rectifier 备注：这里有IRF2807多少钱，2025年最近7天走势，今日出价，今日竞价，IRF2807批发/采购报价，IRF2807行情走势销售排行榜，IRF2807报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF2807

Power MOSFET(Vdss=75V, Id=82A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

KERSEMI

IRF2807

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

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IRF2807

N-Channel MOSFET Transistor

文件：338.77 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807L

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807LPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807LPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRF2807S

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807S

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807S

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807SPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807SPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRF2807Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZL

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZLPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZS

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZSPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807L

Isc N-Channel MOSFET Transistor

文件：300.39 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807L

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807PBF

Advanced Process Technology

文件：3.08673 Mbytes Page：8 Pages

KERSEMI

IRF2807PBF

Advanced Process Technology

文件：192.22 Kbytes Page：8 Pages

IRF

IRF2807PBF_15

Advanced Process Technology

文件：239.57 Kbytes Page：8 Pages

IRF

IRF2807S

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807S

Isc N-Channel MOSFET Transistor

文件：189.1 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807SPBF_15

Advanced Process Technology

文件：278.55 Kbytes Page：11 Pages

IRF

IRF2807STRLPBF

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807Z

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807Z

N-Channel MOSFET Transistor

文件：340.21 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZL

Isc N-Channel MOSFET Transistor

文件：301.04 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF_15

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZS

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZS

Isc N-Channel MOSFET Transistor

文件：189.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZSPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZSTRLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRRPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

2807

60 MHz surface mount bandpass filter

General Description KR 2807 is a 60 MHz surface mount bandpass filter. The filter has a 3 dB bandwidth of 9 MHz ± 1 MHz. Other center frequencies and bandwidths available. Please consult the factory. Features • Surface Mount Package • Sharp Transition to Stopband • >40 dB Stopband • 50 Ω Sou

KR

KR Electronics, Inc.

2807

Mini-Node CATV Optical Receiver

Mini-Node CATV Optical Receiver The 2807 Mini-Node CATV Optical Receiver, working with either the 2804 PDS or 2805 PNS transmitter, provides CATV distribution head end operators with an extensive array of features that offer a low-cost solution to increase system performance. The receiver provide

EMCORE

Emcore Corporation

2807NA-SFAP

Mini-Node CATV Optical Receiver

Mini-Node CATV Optical Receiver The 2807 Mini-Node CATV Optical Receiver, working with either the 2804 PDS or 2805 PNS transmitter, provides CATV distribution head end operators with an extensive array of features that offer a low-cost solution to increase system performance. The receiver provide

EMCORE

Emcore Corporation

2807

Shorty Bushings

文件：102.78 Kbytes Page：1 Pages

HeycoHeyco.

海科

2807N

150A竊?5V N-CHANNEL MOSFET

文件：378.76 Kbytes Page：7 Pages

KIA

可易亚半导体

IRF2807产品属性

  • 类型

    描述

  • 型号

    IRF2807

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

  • 制造商

    International Rectifier

  • 功能描述

    Single N-Channel 75 V 230 W 160 nC Hexfet Power Mosfet Flange Mount - TO-220AB

IRF2807供应商更多...

更新时间：2025-8-8 12:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市南科功率半导体有限公司
IRF2807S
NK/南科功率
2025+
TO-263
986966
国产
询价
深圳兆威电子有限公司
IRF2807STRRPBF
IR
22+
TO263
34232
原装正品现货
询价
深圳市中远芯科技有限公司
IRF2807PBF
IR
22+
DIP
978
原装现货
询价
深圳市盈慧通电子有限公司
IRF2807ZSTRLPBF
Infineon(英飞凌)
2511
TO-263-3
8790
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市星佑电子有限公司
IRF2807
IR
06+
TO-220
8000
自己公司全新库存绝对有货
询价
深圳市得捷芯城科技有限公司
IRF2807ZPBF
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市高捷芯城科技有限公司
IRF2807ZSTRLPBF
Infineon(英飞凌)
24+
TO2633
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市科达星科技有限公司
IRF2807
IR
24+
TO-220AB
27500
原装正品,价格最低!
询价
深圳市创新迹电子有限公司
IRF2807ZSTRLPB
INFINEON
23+
800
8000
专注配单,只做原装进口现货
询价
深圳市航润创能电子集团有限公司
IRF2807PBF
IR
21+
TO-220
2000
原装现货假一赔十
询价

IRF2807芯片相关品牌

IRF2807规格书下载地址

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IRF2807数据表相关新闻

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