找IC，尽在114IC

芯片资料
  • 芯片资料
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 制造商
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第77页 > IRF2807L

型号 功能描述 生产厂家 企业 LOGO 操作
IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807L

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807L

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

KERSEMI

IRF2807L

Advanced Process Technology

INFINEON

英飞凌

IRF2807L

Isc N-Channel MOSFET Transistor

文件：300.39 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807L

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

IRF

IRF2807LPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF2807LPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

KA2807D

Earth Leakage Detector

Description The KA2807 is a IC for ground fault circuit interrupters which are intended to provide an electrical shock hazard protection from line to ground fault currents on grounded circuits of 120V supplies. Features • Full Advantage of the UL943 • Built-In Voltage Regulator • Sense Coil:

FAIRCHILD

仙童半导体

UPC2807

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807A

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807AW

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807W

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

IRF2807L产品属性

  • 类型

    描述

  • 型号

    IRF2807L

  • 功能描述

    MOSFET N-CH 75V 82A TO-262

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF2807L供应商更多...

更新时间：2026-3-15 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威尔健半导体有限公司
IRF2807L
IR
23+
TO-262
50000
全新原装正品现货,支持订货
询价
芯有半导体（深圳）有限公司
IRF2807L
IR
06+
TO-262
5000
原装
询价
深圳市能元时代电子有限公司
IRF2807L
IR
23+
TO-262
50311
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
中天科工半导体（深圳）有限公司
IRF2807L
IR
20+
TO-262
38900
原装优势主营型号-可开原型号增税票
询价
深圳市勤思达科技有限公司
IRF2807L
IR
2015+
TO-262
12500
全新原装,现货库存长期供应
询价
深圳市安富世纪电子有限公司
IRF2807L
IR
23+
TO-262
50000
全新原装正品现货,支持订货
询价
深圳市昌和盛利电子有限公司
IRF2807L
IR
26+
TO-262
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市亿智腾科技有限公司
IRF2807L
IR
24+
TO-220
6430
原装现货/欢迎来电咨询
询价
天津市博通航睿技术有限公司
IRF2807LPBF
IR
23+
TO-262
7000
询价
深圳瞄钧科技有限公司
IRF2807LPBF
IR
24+
TO-262
45000
原装正品 特价现货(香港 新加坡 日本)
询价

IRF2807L芯片相关品牌

IRF2807L规格书下载地址

IRF2807L参数引脚图相关

IRF2807L数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2026 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示