HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

采用 D2-Pak 封装的 75V 单 N 沟道功率 MOSFET

\n优势:\n• RoHS Compliant\n• Low RDS(on)\n• Industry-leading quality\n• Dynamic dv/dt Rating\n• Fast Switching\n• Fully Avalanche Rated\n• 175°C Operating Temperature;

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.1 Kbytes Page：2 Pages

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Advanced Process Technology

文件：278.55 Kbytes Page：11 Pages

Advanced Process Technology

文件：133.54 Kbytes Page：11 Pages

Earth Leakage Detector

Description The KA2807 is a IC for ground fault circuit interrupters which are intended to provide an electrical shock hazard protection from line to ground fault currents on grounded circuits of 120V supplies. Features • Full Advantage of the UL943 • Built-In Voltage Regulator • Sense Coil:

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,