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IRF2807S价格
参考价格：￥4.8711
型号：IRF2807SPBF 品牌：INTERNATIONAL 备注：这里有IRF2807S多少钱，2026年最近7天走势，今日出价，今日竞价，IRF2807S批发/采购报价，IRF2807S行情走势销售排行榜，IRF2807S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF2807S | HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF |   | |
IRF2807S | HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | |
IRF2807S | Advanced Process Technology Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de | KERSEMI | | |
IRF2807S | 采用 D2-Pak 封装的 75V 单 N 沟道功率 MOSFET | INFINEON 英飞凌 | | |
IRF2807S | Advanced Process Technology 文件：133.54 Kbytes Page：11 Pages | IRF | | |
IRF2807S | 丝印代码：D2PAK；Isc N-Channel MOSFET Transistor 文件：189.1 Kbytes Page：2 Pages | ISC 无锡固电 | | |
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
Advanced Process Technology Ultra Low On-Resistance Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | KERSEMI | | ||
Advanced Process Technology 文件：278.55 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：133.54 Kbytes Page：11 Pages | IRF | | ||
Earth Leakage Detector Description The KA2807 is a IC for ground fault circuit interrupters which are intended to provide an electrical shock hazard protection from line to ground fault currents on grounded circuits of 120V supplies. Features • Full Advantage of the UL943 • Built-In Voltage Regulator • Sense Coil: | FAIRCHILD 仙童半导体 | | ||
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, | NEC 瑞萨 | | ||
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, | NEC 瑞萨 | | ||
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, | NEC 瑞萨 | | ||
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter, | NEC 瑞萨 | |
IRF2807S产品属性
- 类型
描述
- 型号
IRF2807S
- 功能描述
MOSFET N-CH 75V 82A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
TO-263-2 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon(英飞凌) |
25+ |
TO-263-2 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-263 |
65200 |
一级代理/全新现货/长期供应! |
|||
IR/INFINEON |
24+ |
TO-263 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
25+ |
D2PAK |
8800 |
公司只做原装,详情请来电咨询 |
|||
IR |
最新 |
1000 |
原装正品现货 |
||||
INFINEON |
21+ |
TO-263 |
10000 |
十年信誉,只做原装,有挂就有现货! |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
20300 |
INFINEON/英飞凌原装特价IRF2807STRLPBF即刻询购立享优惠#长期有货 |
IRF2807S规格书下载地址
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