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位置：首页 > IC中文资料第716页 > IRF2807Z

IRF2807Z价格

参考价格：￥11.3665

型号：IRF2807ZLPBF 品牌：International 备注：这里有IRF2807Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRF2807Z批发/采购报价，IRF2807Z行情走势销售排行榜，IRF2807Z报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF2807Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807Z

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807Z

N-Channel MOSFET Transistor

文件：340.21 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZL

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZLPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZS

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZSPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZL

Isc N-Channel MOSFET Transistor

文件：301.04 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF_15

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZS

Isc N-Channel MOSFET Transistor

文件：189.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZS

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZSPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZSTRLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRRPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

2807

60 MHz surface mount bandpass filter

General Description KR 2807 is a 60 MHz surface mount bandpass filter. The filter has a 3 dB bandwidth of 9 MHz ± 1 MHz. Other center frequencies and bandwidths available. Please consult the factory. Features • Surface Mount Package • Sharp Transition to Stopband • >40 dB Stopband • 50 Ω Sou

KR

KR Electronics, Inc.

2807

Mini-Node CATV Optical Receiver

Mini-Node CATV Optical Receiver The 2807 Mini-Node CATV Optical Receiver, working with either the 2804 PDS or 2805 PNS transmitter, provides CATV distribution head end operators with an extensive array of features that offer a low-cost solution to increase system performance. The receiver provide

EMCORE

Emcore Corporation

2807NA-SFAP

Mini-Node CATV Optical Receiver

Mini-Node CATV Optical Receiver The 2807 Mini-Node CATV Optical Receiver, working with either the 2804 PDS or 2805 PNS transmitter, provides CATV distribution head end operators with an extensive array of features that offer a low-cost solution to increase system performance. The receiver provide

EMCORE

Emcore Corporation

2807

Shorty Bushings

文件：102.78 Kbytes Page：1 Pages

HeycoHeyco.

海科

2807N

150A竊?5V N-CHANNEL MOSFET

文件：378.76 Kbytes Page：7 Pages

KIA

可易亚半导体

IRF2807Z产品属性

  • 类型

    描述

  • 型号

    IRF2807Z

  • 功能描述

    MOSFET N-CH 75V 75A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF2807Z供应商更多...

更新时间：2025-8-9 18:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
IRF2807Z
IR
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
深圳市威雅利发展有限公司
IRF2807ZHR
IR
13+
SMD
977
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市星辰微电科技有限公司
IRF2807Z
Infineon
23+
TO220
15500
英飞凌优势渠道全系列在售
询价
深圳市创新迹电子有限公司
IRF2807Z
IR
2022+
TO-220AB
30000
进口原装现货供应,原装 假一罚十
询价
深圳市昌和盛利电子有限公司
IRF2807Z
IR
23+
TO-220
35890
询价
深圳市坤融电子科技有限公司
IRF2807ZSPBF
IR
24+
TO-263
2411
只做原厂渠道 可追溯货源
询价
深圳市一线半导体有限公司
IRF2807Z
IR
24+
TO-220AB
8866
询价
深圳市高捷芯城科技有限公司
IRF2807ZSPBF
Infineon(英飞凌)
24+
TO-263
7793
支持大陆交货,美金交易。原装现货库存。
询价
深圳市科恒伟业电子有限公司
IRF2807Z
IR
2016+
TO-220
6528
房间原装进口现货假一赔十
询价
深圳市勤思达科技有限公司
IRF2807ZPBF
IR
24+
N/A
8000
全新原装正品,现货销售
询价

IRF2807Z芯片相关品牌

IRF2807Z规格书下载地址

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