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位置：首页 > IC中文资料第716页 > IRF2807Z

IRF2807Z价格

参考价格：￥11.3665

型号：IRF2807ZLPBF 品牌：International 备注：这里有IRF2807Z多少钱，2026年最近7天走势，今日出价，今日竞价，IRF2807Z批发/采购报价，IRF2807Z行情走势销售排行榜，IRF2807Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF2807Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807Z

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807Z

N-Channel MOSFET Transistor

文件：340.21 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807Z

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

INFINEON

英飞凌

IRF2807ZL

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZLPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF2807ZS

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF2807ZSPBF

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

IRF

IRF2807ZL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZL

Isc N-Channel MOSFET Transistor

文件：301.04 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZPBF_15

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZS

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZS

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF2807ZS

75V 单个 n 通道 HEXFET Power MOSFET, 采用 D2Pak 封装

INFINEON

英飞凌

IRF2807ZSPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRL

Advanced Process Technology

文件：279.61 Kbytes Page：13 Pages

IRF

IRF2807ZSTRL

MOSFET N-CH 75V 75A D2PAK

VISHAYVishay Siliconix

威世威世科技公司

IRF2807ZSTRLPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

IRF2807ZSTRRPBF

Advanced Process Technology

文件：405.08 Kbytes Page：12 Pages

IRF

KA2807D

Earth Leakage Detector

Description The KA2807 is a IC for ground fault circuit interrupters which are intended to provide an electrical shock hazard protection from line to ground fault currents on grounded circuits of 120V supplies. Features • Full Advantage of the UL943 • Built-In Voltage Regulator • Sense Coil:

FAIRCHILD

仙童半导体

UPC2807

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807A

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807AW

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

UPC2807W

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain first stage amplifier, limiter, bandpass filter,

NEC

瑞萨

IRF2807Z产品属性

  • 类型

    描述

  • 型号

    IRF2807Z

  • 功能描述

    MOSFET N-CH 75V 75A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF2807Z供应商更多...

更新时间：2026-3-14 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
IRF2807ZSTRLPBF
Infineon(英飞凌)
25+
D2PAK
22412
原装正品现货,原厂订货,可支持含税原型号开票。
询价
上海意淼电子科技有限公司
IRF2807ZSTRLPBF
INFINEON
23+
K-B
21600
只有原装,请来电咨询
询价
深圳市纳艾斯科技有限公司
IRF2807ZPBF
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市得捷芯城科技有限公司
IRF2807ZSTRLPBF
Infineon(英飞凌)
25+
D2PAK
22412
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市科恒伟业电子有限公司
IRF2807ZSPBF
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
询价
深圳市华斯顿科技有限公司
IRF2807ZLPBF
IR
25+23+
TO-262
16386
绝对原装正品全新进口深圳现货
询价
深圳市胜彬电子有限公司
IRF2807ZS
IR
22+
D2-PAK
8000
原装正品支持实单
询价
深圳市恒凯威科技开发有限公司
IRF2807ZPBF
Infineon/英飞凌
21+
TO-220AB
6820
只做原装,质量保证
询价
深圳市拓亿芯电子有限公司
IRF2807ZPBF
IR/INFINEON
25+
TO-220
30000
代理全新原装现货,价格优势
询价
深圳市毅创腾电子科技有限公司
IRF2807ZS
IR
23+
TO-263
1600
绝对全新原装!优势供货渠道!特价!请放心订购!
询价

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IRF2807Z规格书下载地址

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