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IRF25价格

参考价格：￥68.7847

型号：IRF250 品牌：INTERNATIONAL RECTIFIER 备注：这里有IRF25多少钱，2025年最近7天走势，今日出价，今日竞价，IRF25批发/采购报价，IRF25行情走势销售排行榜，IRF25报价。

型号	功能描述	生产厂家企业	LOGO
IRF250	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)	Samsung 三星	Samsung
IRF250	30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor	Intersil	Intersil
IRF250	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·	ISC 无锡固电	ISC
IRF250	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert	IXYS 艾赛斯	IXYS
IRF250	N-CHANNE POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF250	N-Channel Power MOSFET DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po	NELLSEMI 尼尔半导体	NELLSEMI
IRF2505	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert	IXYS 艾赛斯	IXYS
IRF2505	N-Channel Power MOSFET DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po	NELLSEMI 尼尔半导体	NELLSEMI
IRF2505	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF2505	30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor	Intersil	Intersil
IRF2505	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)	Samsung 三星	Samsung
IRF250SMD	N.CHANNEL POWER MOSFET FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES	SEME-LAB	SEME-LAB
IRF251	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)	Samsung 三星	Samsung
IRF251	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert	IXYS 艾赛斯	IXYS
IRF251	N-CHANNE POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF251	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF252	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)	Samsung 三星	Samsung
IRF252	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert	IXYS 艾赛斯	IXYS
IRF252	N-CHANNE POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF252	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF252	Nanosecond Switching Speed DESCRIPTION • Drain Current ID=25A@ TC=25℃ • Drain Source Voltage : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.12Ω(Max) • Nanosecond Switching Speed APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver	ISC 无锡固电	ISC
IRF253	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)	Samsung 三星	Samsung
IRF253	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert	IXYS 艾赛斯	IXYS
IRF253	N-CHANNEL POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF253	N-CHANNE POWER MOSFETS FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF254	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert	IXYS 艾赛斯	IXYS
IRF250	30A, 200V, 0.085 Ohm, N-Channel Power MOSFET	RENESAS 瑞萨	RENESAS
IRF250	MOSFETs and JFETs	TTELEC	TTELEC
IRF250	N-CHANNEL POWER MOSFETS	ONSEMI 安森美半导体	ONSEMI
IRF250	50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 文件：84.86 Kbytes Page：2 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IRF250	N-CHANNEL POWER MOSFET 文件：22.05 Kbytes Page：2 Pages	SEME-LAB	SEME-LAB
IRF2505	50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 文件：84.86 Kbytes Page：2 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IRF2505	N-CHANNEL POWER MOSFET 文件：22.05 Kbytes Page：2 Pages	SEME-LAB	SEME-LAB
IRF250P224	IR MOSFET - StrongIRFET? 文件：1.06583 Mbytes Page：17 Pages	Infineon 英飞凌	Infineon
IRF250P224	N-Channel MOSFET Transistor 文件：335.12 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF250P225	IR MOSFET - StrongIRFET? 文件：1.06551 Mbytes Page：17 Pages	Infineon 英飞凌	Infineon
IRF250P225	N-Channel MOSFET Transistor 文件：334.9 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF251	Nanosecond Switching Speed 文件：48.42 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF253	Nanosecond Switching Speed 文件：48.33 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF254	Nanosecond Switching Speed 文件：48.37 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF254	Avalanche-Energy-Rated N-Channel Power MOSFETs 文件：182.31 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF255	Nanosecond Switching Speed 文件：48.26 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF255	Avalanche-Energy-Rated N-Channel Power MOSFETs 文件：182.31 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF256	Nanosecond Switching Speed 文件：48.26 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF256	Avalanche-Energy-Rated N-Channel Power MOSFETs 文件：182.31 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF257	Nanosecond Switching Speed 文件：48.27 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF257	Avalanche-Energy-Rated N-Channel Power MOSFETs 文件：182.31 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI

IRF25产品属性

类型
描述
型号
IRF25
制造商
International Rectifier
功能描述
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3
制造商
International Rectifier
功能描述
TRANS MOSFET N-CH 200V 30A 2PIN TO-204AA - Bulk
制造商
International Rectifier
功能描述
MOSFET N TO-3
制造商
International Rectifier
功能描述
MOSFET, N, TO-3
制造商
International Rectifier
功能描述
N CH MOSFET, 200V, 30A, TO-204AE; Transistor
Polarity
N Channel; Continuous Drain Current
Id
30A; Drain Source Voltage
Vds
200V; On Resistance
Rds(on)
85mohm; Rds(on) Test Voltage
Vgs
10V; Threshold Voltage Vgs
Typ
4V; No. of
Pins
2 ;RoHS
Compliant
No
制造商
TT Electronics/Semelab
功能描述
MOSFET N-Channel 200V 30A TO-3

IRF25供应商更多...

更新时间：2025-12-26 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IRF250P225	Infineon(英飞凌)	24+	TO-247	8248	原厂可订货,技术支持,直接渠道。可签保供合同	询价
上海意淼电子科技有限公司	IRF250	IR	23+	NA	12000	全新原装假一赔十	询价
深圳市威雅利发展有限公司	IRF250	M	94+;1923;;09+	TO-3	200	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市明嘉莱科技有限公司	IRF250其他被动元件	IR	24+	TO 3P	161080	明嘉莱只做原装正品现货	询价
中天科工半导体（深圳）有限公司	IRF250P225	INFINEON/英飞凌	25+	TO247	32360	INFINEON/英飞凌全新特价IRF250P225即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	IRF250	IR	2430+	CAN	8540	只做原装正品假一赔十为客户做到零风险!!	询价
标准国际(香港)有限公司	IRF250		25+		4	公司优势库存热卖中!	询价
深圳市福田区绿盛电子商行	IRF250	IR	2015+	TO-3(铁帽)	19889	一级代理原装现货,特价热卖!	询价
深圳市毅创弘电子科技有限公司	IRF250	IR	24+	TO-03	66800	原厂授权一级代理,专注汽车、医疗、工业、新能源！	询价
深圳市恒达亿科技有限公司	IRF250	IR	25+	TO220	3000	全新原装、诚信经营、公司现货销售	询价

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IRF25价格

IRF25产品属性

IRF25供应商更多...

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