High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

N-Channel Power MOSFET

DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)

N-CHANNEL POWER MOSFET

文件：22.05 Kbytes Page：2 Pages

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

文件：84.86 Kbytes Page：2 Pages

Surface Mount Package

文件：28.28 Kbytes Page：2 Pages

CAPTIVE PANEL SCREWS

文件：395.93 Kbytes Page：1 Pages

Aluminum Housing Armored Cable Wide Gap

文件：135.53 Kbytes Page：1 Pages

16 Mbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

文件：510.42 Kbytes Page：38 Pages

16 Mbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

文件：510.42 Kbytes Page：38 Pages