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型号 功能描述 生产厂家 企业 LOGO 操作
IRF251

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF251

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF251

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)

SAMSUNG

三星

IRF251

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

IXYS

艾赛斯

IRF251

Nanosecond Switching Speed

文件:48.42 Kbytes Page:2 Pages

ISC

无锡固电

IRF251

N-CHANNEL POWER MOSFETS

SAMSUNG

三星

IRF251

Trans MOSFET 150V 30A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP video transistor

DESCRIPTION PNP video transistor in a SOT54 (TO-92) plastic package. NPN complement: BFQ231. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high

PHILIPS

飞利浦

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

NTE

Ultra Bright GaAIAs Lamps

文件:29.92 Kbytes Page:1 Pages

PANASONIC

松下

Ultra Bright GaAIAs Lamps

文件:29.92 Kbytes Page:1 Pages

PANASONIC

松下

Square Type

文件:30.74 Kbytes Page:1 Pages

PANASONIC

松下

IRF251产品属性

  • 类型

    描述

  • Maximum Drain Source Voltage:

    150V

  • Maximum Continuous Drain Current:

    30A

  • Category:

    Power MOSFET

更新时间:2026-5-17 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-3
10000
IR
26+
SOP8L-PP
86720
全新原装正品价格最实惠 假一赔百
IR
22+
TO-3
20000
公司只做原装 品质保障
IR
23+
TO-3
7000
IR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
IR
23+
65480
MOTOROLA
23+
TO-3
50301
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
1430+
TO-3
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
24+
SOT23
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
IR
22+
TO-3
6000
终端可免费供样,支持BOM配单

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