IRF250价格

参考价格:¥68.7847

型号:IRF250 品牌:INTERNATIONAL RECTIFIER 备注:这里有IRF250多少钱,2025年最近7天走势,今日出价,今日竞价,IRF250批发/采购报价,IRF250行情走势销售排行榜,IRF250报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF250

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

Intersil

Intersil Corporation

Intersil
IRF250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Corporation

IXYS
IRF250

N-CHANNEPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF250

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI
IRF250

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)

SamsungSamsung semiconductor

三星三星半导体

Samsung
IRF250

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

文件:84.86 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
IRF250

N-CHANNELPOWERMOSFET

文件:22.05 Kbytes Page:2 Pages

SEME-LAB

Seme LAB

SEME-LAB

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)

SamsungSamsung semiconductor

三星三星半导体

Samsung

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

Intersil

Intersil Corporation

Intersil

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Corporation

IXYS

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

N.CHANNELPOWERMOSFET

FEATURES •HERMETICALLYSEALEDSURFACEMOUNTPACKAGE •SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT •HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

SEME-LAB

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

文件:84.86 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

N-CHANNELPOWERMOSFET

文件:22.05 Kbytes Page:2 Pages

SEME-LAB

Seme LAB

SEME-LAB

IRMOSFET-StrongIRFET?

文件:1.06583 Mbytes Page:17 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-ChannelMOSFETTransistor

文件:335.12 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRMOSFET-StrongIRFET?

文件:1.06551 Mbytes Page:17 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

N-ChannelMOSFETTransistor

文件:334.9 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

CommercialComposition9mmDiameterVariableResistors

文件:1.41052 Mbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

Highpeakcurrentcarryingcapabilityupto6000A

文件:299.59 Kbytes Page:3 Pages

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

DCaxialfans

文件:375.69 Kbytes Page:3 Pages

EBMPAPSTebm-papst

依必安派特依必安派特公司

EBMPAPST

DCaxialfans

文件:345.75 Kbytes Page:3 Pages

EBMPAPSTebm-papst

依必安派特依必安派特公司

EBMPAPST

DCaxialfans

文件:505.68 Kbytes Page:3 Pages

EBMPAPSTebm-papst

依必安派特依必安派特公司

EBMPAPST

IRF250产品属性

  • 类型

    描述

  • 型号

    IRF250

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 200V 30A 2PIN TO-204AA - Bulk

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-3

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET, N, TO-3

  • 制造商

    International Rectifier

  • 功能描述

    N CH MOSFET, 200V, 30A, TO-204AE; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    30A; Drain Source Voltage

  • Vds

    200V; On Resistance

  • Rds(on)

    85mohm; Rds(on) Test Voltage

  • Vgs

    10V; Threshold Voltage Vgs

  • Typ

    4V; No. of

  • Pins

    2 ;RoHS

  • Compliant

    No

  • 制造商

    TT Electronics/Semelab

  • 功能描述

    MOSFET N-Channel 200V 30A TO-3

更新时间:2025-8-4 21:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
NA
6800
原装正品,力挺实单
Infineon/英飞凌
23+
TO-247AC
12700
买原装认准中赛美
IR
三年内
1983
只做原装正品
IR
22+
TO-262
100000
代理渠道/只做原装/可含税
IR
24+
NA/
3295
原装现货,当天可交货,原型号开票
INFINEON/英飞凌
25+
TO-3
54648
百分百原装现货 实单必成 欢迎询价
Infineon/英飞凌
24+
TO-247AC
6000
全新原装深圳仓库现货有单必成
IR
24+
TO 3P
161080
明嘉莱只做原装正品现货
IR
21+
9800
只做原装正品假一赔十!正规渠道订货!
Infineon
23+
TO247
15500
英飞凌优势渠道全系列在售

IRF250芯片相关品牌

  • AMPHENOLCS
  • Central
  • GENESIC
  • Intersil
  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • PTC
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

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