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位置：首页 > IC中文资料 > IRF250

IRF250价格

参考价格：￥68.7847

型号：IRF250 品牌：INTERNATIONAL RECTIFIER 备注：这里有IRF250多少钱，2026年最近7天走势，今日出价，今日竞价，IRF250批发/采购报价，IRF250行情走势销售排行榜，IRF250报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF250

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)

SAMSUNG

三星

IRF250

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor

INTERSIL

IRF250

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

IXYS

艾赛斯

IRF250

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·

ISC

无锡固电

IRF250

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF250

N-Channel Power MOSFET

DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po

NELLSEMI

尼尔半导体

IRF250

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor d • 30A, 200V\n• rDS(ON) = 0.085Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

RENESAS

瑞萨

IRF250

MOSFETs and JFETs

TTELEC

IRF250

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半导体

IRF250

N-CHANNEL POWER MOSFET

文件：22.05 Kbytes Page：2 Pages

SEME-LAB

IRF250

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

文件：84.86 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF2505

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

IXYS

艾赛斯

IRF2505

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These MOSFETs are designed for applications such as switching regulators, switching converters, motor

INTERSIL

IRF2505

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High voltage)

SAMSUNG

三星

IRF2505

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF2505

N-Channel Power MOSFET

DESCRIPTION The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode po

NELLSEMI

尼尔半导体

IRF250SMD

N.CHANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES

SEME-LAB

IRF2505

N-CHANNEL POWER MOSFET

文件：22.05 Kbytes Page：2 Pages

SEME-LAB

IRF2505

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

文件：84.86 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF250P224

N-Channel MOSFET Transistor

文件：335.12 Kbytes Page：2 Pages

ISC

无锡固电

IRF250P224

IR MOSFET - StrongIRFET?

文件：1.06583 Mbytes Page：17 Pages

INFINEON

英飞凌

IRF250P225

IR MOSFET - StrongIRFET?

文件：1.06551 Mbytes Page：17 Pages

INFINEON

英飞凌

IRF250P225

N-Channel MOSFET Transistor

文件：334.9 Kbytes Page：2 Pages

ISC

无锡固电

BD250

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

RM250CZ-H

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current .......... 250A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

MITSUBISHI

三菱电机

RM250CZ-M

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current .......... 250A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

MITSUBISHI

三菱电机

RM250DZ-H

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current .......... 250A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

MITSUBISHI

三菱电机

RM250UZ-H

HIGH POWER GENERAL USE INSULATED TYPE

• IF(AV) Average forward current .......... 250A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor c

MITSUBISHI

三菱电机

IRF250产品属性

  • 类型

    描述

  • Minimum Operating Temperature：

    -55°C

  • Maximum Power Dissipation：

    150000mW

  • Maximum Operating Temperature：

    150°C

  • Maximum Gate Source Voltage：

    ±20V

  • Maximum Drain Source Voltage：

    200V

  • Maximum Continuous Drain Current：

    30A

  • Configuration：

    Single

  • Channel Type：

    N

  • Channel Mode：

    Enhancement

  • Category：

    Power MOSFET

IRF250供应商更多...

更新时间：2026-5-15 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市欧立现代科技有限公司
IRF250
IR
24+
TO-3
7200
绝对原装现货,价格低,欢迎询购!
询价
深圳市美思瑞电子科技有限公司
IRF250
IR
22+
TO-220
12245
现货,原厂原装假一罚十!
询价
深圳市赛尔通科技有限公司
IRF250
IR
23+
65480
询价
深圳市百诺芯科技有限公司
IRF250P224
Infineon(英飞凌)
23+
N/A
40
代理渠道,价格优势
询价
深圳市高捷芯城科技有限公司
IRF250P224
Infineon(英飞凌)
25+
TO-247AC-3
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
标准国际(香港)有限公司
IRF250
25+
4
公司优势库存 热卖中!
询价
深圳市纳立科技有限公司
IRF250
IR
三年内
1983
只做原装正品
询价
深圳市得捷芯城科技有限公司
IRF250P224
Infineon(英飞凌)
25+
TO-247AC-3
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
艾睿（深圳）半导体有限公司
IRF250
N/A
2447
a
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市毅创弘电子科技有限公司
IRF250
IR
24+
TO-03
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源！
询价

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