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IRF110价格

参考价格:¥4.9805

型号:IRF1104PBF 品牌:International 备注:这里有IRF110多少钱,2026年最近7天走势,今日出价,今日竞价,IRF110批发/采购报价,IRF110行情走势销售排行榜,IRF110报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

采用 TO-262 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

N-Channel MOSFET Transistor

文件:338.55 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:191.29 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:191.29 Kbytes Page:9 Pages

IRF

Advanced Process Technology

INFINEON

英飞凌

Advanced Process Technology

文件:272.44 Kbytes Page:11 Pages

IRF

POWER RECTIFIERS(1.0A,500-1000V)

MOSPEC

统懋

POWER RECTIFIERS(1.0A,500-1000V)

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

MOSPEC

统懋

POWER RECTIFIERS(1.0A,500-1000V)

ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS

MOSPEC

统懋

IRF110产品属性

  • 类型

    描述

  • OPN:

    IRF1104PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    40 V

  • RDS (on) @10V max:

    9 mΩ

  • ID @25°C max:

    100 A

  • QG typ @10V:

    62 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-24 13:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINE0N
21+
I2PAK (TO-262)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
26+
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
2021+
TO-220
6000
全新原装正品 现货供应
IR
最新
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
IR
24+
D2-Pak
8866
IR
2026+
SOP
10068
只做原厂原装,认准宝芯创配单专家
Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
INFINEON
25+
原封装
81220
郑重承诺只做原装进口货

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