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IRF1104S中文资料
IRF1104S数据手册规格书PDF详情
VDSS = 40V
RDS(on) = 0.009Ω
ID = 100A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Advanced Process Technology
Ultra Low On-Resistance
Surface Mount (IRF1104S)
Low-profile through-hole (IRF1104L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRF1104S产品属性
- 类型
描述
- 型号
IRF1104S
- 功能描述
MOSFET N-CH 40V 100A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
501251 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
05+ |
原厂原装 |
551 |
只做全新原装真实现货供应 |
|||
IR |
16+ |
SOP |
4 |
全新原装现货 |
|||
IR |
24+ |
D2-Pak |
8866 |
||||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
08+ |
SOP |
10068 |
只做原厂原装,认准宝芯创配单专家 |
|||
IR |
1902+ |
SOP |
2734 |
代理品牌 |
|||
IR |
20+ |
D2-Pak |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
JAECS |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
|||
IR |
2447 |
D2-PAK |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
IRF1104S 资料下载更多...
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