IRF1104价格

参考价格:¥4.9805

型号:IRF1104PBF 品牌:International 备注:这里有IRF1104多少钱,2026年最近7天走势,今日出价,今日竞价,IRF1104批发/采购报价,IRF1104行情走势销售排行榜,IRF1104报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1104

Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

IRF1104

采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET

INFINEON

英飞凌

IRF1104

N-Channel MOSFET Transistor

文件:338.55 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

采用 TO-262 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

INFINEON

英飞凌

Advanced Process Technology

文件:191.29 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:191.29 Kbytes Page:9 Pages

IRF

Advanced Process Technology

INFINEON

英飞凌

Advanced Process Technology

文件:272.44 Kbytes Page:11 Pages

IRF

MMCX RIGHT ANGLE PLUG CRIMP

ELECTRICAL: IMPEDANCE: 50 OHMS. WITHSTAND VOLTAGE: 500V FREQUENCY RANGE: 0 - 6 GHz. VSWR: ≤ 1.50 @ 0-6 GHz. DURABILITY: ≥ 500 CYCLE CABLE RETENTION: > 10 POUNDS MISCELLANEOUS: APPLICATION: LOW-LOSS 100 SERIES, RG174, RG316, RG188, & RG179. COMPONENTS SHALL BE INDIVIDUALLY PACKAGED IN ACCO

L-COM

英飞畅

TORQUE PRODUCTS

文件:3.50277 Mbytes Page:32 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

CAROL STREAM, ILLINOIS 60188

文件:174.65 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Heyco짰 Original Strain Relief Bushings

文件:137.33 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Original Strain Relief Bushings

文件:136.21 Kbytes Page:1 Pages

HEYCO

IRF1104产品属性

  • 类型

    描述

  • 型号

    IRF1104

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

更新时间:2026-1-27 15:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2023+
D2-PAK
50000
原装现货
INFINEON
24+
con
8
现货常备产品原装可到京北通宇商城查价格
Infineon/英飞凌
21+
TO-220AB
6820
只做原装,质量保证
Infineon/英飞凌
2025+
TO-220AB
8000
IR
25+23+
TO-220
23935
绝对原装正品全新进口深圳现货
IR
26+
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
26+
TSSOP
86720
全新原装正品价格最实惠 假一赔百
INFINEON
25+
原封装
81220
郑重承诺只做原装进口货
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
24+
D2-Pak
8866

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