IRF1104价格

参考价格:¥4.9805

型号:IRF1104PBF 品牌:International 备注:这里有IRF1104多少钱,2026年最近7天走势,今日出价,今日竞价,IRF1104批发/采购报价,IRF1104行情走势销售排行榜,IRF1104报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1104

Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

IRF1104

N-Channel MOSFET Transistor

文件:338.55 Kbytes Page:2 Pages

ISC

无锡固电

IRF1104

采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET

INFINEON

英飞凌

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

IRF

HEXFET Power MOSFET

VDSS = 40V RDS(on) = 0.009Ω ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

IRF

采用 TO-262 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

INFINEON

英飞凌

Advanced Process Technology

文件:191.29 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:191.29 Kbytes Page:9 Pages

IRF

Advanced Process Technology

INFINEON

英飞凌

Advanced Process Technology

文件:272.44 Kbytes Page:11 Pages

IRF

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2900 V Mean forward current 1680 A Surge current 17.9 kA

POSEICO

Integrated Circuit Wide and Narrow Band Amp, FM/IF Limiter

Applications: • For FM IF Amplifier • For TV SIF Amplifier

NTE

DOLBY PRO LOGIC SURROUND DECODER

文件:84.44 Kbytes Page:6 Pages

NJRC

日本无线

Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers

文件:119.95 Kbytes Page:16 Pages

PHILIPS

飞利浦

Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers

文件:119.95 Kbytes Page:16 Pages

PHILIPS

飞利浦

IRF1104产品属性

  • 类型

    描述

  • 型号

    IRF1104

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

更新时间:2026-3-17 10:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
D2-PAK
8000
原装正品支持实单
IR
25+
TO-262
231
普通
IR
25+
D2-Pak
10000
原装现货假一罚十
Infineon
24+
NA
3000
进口原装正品优势供应
IR
1902+
SOP
2734
代理品牌
IR
24+
TO-220
5000
只做原装正品现货 欢迎来电查询15919825718
IR
25+
TO-262
30000
代理全新原装现货,价格优势
INFINEON
08+
TO-220
22950
全新原装公司现货
IR
1923+
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
Infineon/英飞凌
21+
TO-220AB
6820
只做原装,质量保证

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