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IR211价格

参考价格：￥646.4218

型号：IR2110L4 品牌：INTERNATIONAL RECTIFIER 备注：这里有IR211多少钱，2025年最近7天走势，今日出价，今日竞价，IR211批发/采购报价，IR211行情走势销售排行榜，IR211报价。

型号	功能描述	生产厂家&企业	LOGO
IR211	SLOTTED SWITCH 5mm GAP 9mm LEAD SPACING 文件：24.56 Kbytes Page：1 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IR2110	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2110	IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Features • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Separate logic supply range from 3.	SYC	SYC
IR2110-1	IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2110-1PBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2110-2PBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2110E6	HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT	IRF	IRF
IR2110L6	HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT	IRF	IRF
IR2110PBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2110S	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2110SPBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2110STR	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2110STRPBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2111	HALF-BRIDGE DRIVER Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is com	IRF	IRF
IR2111	HALF-BRIDGE DRIVER Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is com	IRF	IRF
IR2111PBF	HALF-BRIDGE DRIVER Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is com	IRF	IRF
IR2111S	HALF-BRIDGE DRIVER Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is com	IRF	IRF
IR2111SPBF	HALF-BRIDGE DRIVER Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is com	IRF	IRF
IR2112	HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT	IRF	IRF
IR2112-2	HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT	IRF	IRF
IR2112STRPBF	HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT	IRF	IRF
IR2113	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2113	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2113-1PBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2113-2PBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2113E6	HIGH AND LOW SIDE DRIVER Description The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LST	IRF	IRF
IR2113L6	HIGH AND LOW SIDE DRIVER Description The IR2113L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LST	IRF	IRF
IR2113PBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2113S	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2113SPBF	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR2113STR	HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o	IRF	IRF
IR21141SSPBF	HALF-BRIDGE GATE DRIVER IC Description The IR211(4,41)/IR221(4,41) gate driver family is suited to drive a single half bridge in power switching applications. These drivers provide high gate driving capability (2 A source, 3 A sink) and require low quiescent current, which allows the use of bootstrap power supply technique	IRF	IRF
IR2114SSPBF	HALF-BRIDGE GATE DRIVER IC Description The IR211(4,41)/IR221(4,41) gate driver family is suited to drive a single half bridge in power switching applications. These drivers provide high gate driving capability (2 A source, 3 A sink) and require low quiescent current, which allows the use of bootstrap power supply technique	IRF	IRF
IR2114SSPBF	HALF-BRIDGE GATE DRIVER IC Description The IR2114/IR2214 gate driver family is suited to drive a single half bridge in power switching applications. These drivers provide high gate driving capability (2 A source, 3 A sink) and require low quiescent current, which allows the use of bootstrap power supply techniques in mediu	Infineon 英飞凌	Infineon
IR2117	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2117	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2117	Gate drive supply range from 10 to 20V Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2117PBF	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2117S	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2117SPBF	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2117STRPBF	Gate drive supply range from 10 to 20V Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2118	Gate drive supply range from 10 to 20V Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2118	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2118	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2118PBF	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2118S	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2118SPBF	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2118STRPBF	SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf	IRF	IRF
IR2110	HIGH AND LOW SIDE DRIVER 文件：491.79 Kbytes Page：17 Pages	Infineon 英飞凌	Infineon
IR2110	HIGH VOLTAGE MOS GATE DRIVER 文件：9.50242 Mbytes Page：24 Pages	IRF	IRF
IR2110	HIGH AND LOW SIDE DRIVER 文件：334.13 Kbytes Page：18 Pages	IRF	IRF
IR2110_1	HIGH VOLTAGE MOS GATE DRIVER 文件：9.50242 Mbytes Page：24 Pages	IRF	IRF
IR2110_15	HIGH AND LOW SIDE DRIVER 文件：334.13 Kbytes Page：18 Pages	IRF	IRF
IR2110-1	封装/外壳：14-DIP（0.300"，7.62mm），13 引线包装：散装描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC）栅极驱动器	Infineon 英飞凌	Infineon
IR2110-1PBF	封装/外壳：14-DIP（0.300"，7.62mm），13 引线包装：管件描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC）栅极驱动器	Infineon 英飞凌	Infineon
IR2110E4	HIGH AND LOW SIDE DRIVER 文件：206.91 Kbytes Page：14 Pages	IRF	IRF
IR2110E4	HIGH AND LOW SIDE DRIVER 文件：127.77 Kbytes Page：14 Pages	IRF	IRF
IR2110E4_15	HIGH AND LOW SIDE DRIVER 文件：206.91 Kbytes Page：14 Pages	IRF	IRF
IR2110L	HIGH AND LOW SIDE DRIVER 文件：143.13 Kbytes Page：14 Pages	IRF	IRF
IR2110L4	HIGH AND LOW SIDE DRIVER 文件：139.07 Kbytes Page：14 Pages	IRF	IRF

IR211产品属性

类型
描述
型号
IR211
制造商
FAIRCHILD
制造商全称
Fairchild Semiconductor
功能描述
SLOTTED SWITCH 5mm GAP 9mm LEAD SPACING

IR211供应商更多...

更新时间：2025-8-14 14:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市正纳电子有限公司	IR2110STRPBF	INFINEON	22+	SOIC-16_300mil	3000	原装正品可支持验货,欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	IR2110	IOR	24+	DIP14	3629	原装优势!房间现货!欢迎来电!	询价
中天科工半导体（深圳）有限公司	IR2118STRPBF	INFINEON/英飞凌	25+	SOP-8	32000	INFINEON/英飞凌全新特价IR2118STRPBF即刻询购立享优惠#长期有货	询价
深圳市壹芯创科技有限公司	IR2110	IR	22+	DIP14	5000	全新原装现货!价格优惠!可长期	询价
深圳市赛尔通科技有限公司	IR2113		23+		5000	原装现货本公司为一般纳税人,可开17%增值税票	询价
深圳市创新迹电子有限公司	IR211	IR	23+	TO-	8000	专注配单,只做原装进口现货	询价
深圳市高捷芯城科技有限公司	IR2110P	Infineon(英飞凌)	24+	标准封装	9223	原厂渠道供应,大量现货,原型号开票。	询价
深圳市卓越微芯电子有限公司	IR2113STRPBF	IR	2020+	SOIC-16	9600	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市富诚威科技有限公司	IR2110	IR	24+	DIP	2560	绝对原装!现货热卖!	询价
上海鑫科润电子科技有限公司	IR2110	IOR	04+	DIP-14	24	原装现货海量库存欢迎咨询	询价

IR211芯片相关品牌

IR211规格书下载地址

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IR211数据表相关新闻

IR2110STRPBF
IR2110STRPBF
2023-4-14
IR2104STRPBF
IR2104STRPBF
2021-8-9
IR2104STRPBF 原装代理现货可追溯原厂含税出
IR2104STRPBF 原装代理现货可追溯原厂含税出
2020-11-9
IR2110
IR2110，全新原装当天发货或门市自取0755-82732291.
2019-8-25
IR2111
IR2111，全新原装当天发货或门市自取0755-82732291.
2019-8-21
IR2103-半桥驱动器
说明在IR2103（S）的高电压，高速动力供养高，MOSFET和IGBT驱动器低侧参考输出通道。专有的HVIC免疫和闩锁的CMOS技术使坚固耐用单片建设。逻辑输入兼容标准CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，设计为最小驱动器跨导。浮动通道可以用来驱动一个N沟道功率MOSFET在高端配置的可在高达600伏或IGBT。特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠压锁定
2013-2-9

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IR211价格

IR211产品属性

IR211供应商更多...

IR211芯片相关品牌

IR211规格书下载地址

IR211参数引脚图相关

IR211数据表相关新闻

IR2110STRPBF

IR2104STRPBF

IR2104STRPBF 原装代理现货 可追溯原厂含税出

IR2110

IR2111

IR2103-半桥驱动器

DdatasheetPDF页码索引

IR2104STRPBF 原装代理现货可追溯原厂含税出