位置:IR2113-2PBF > IR2113-2PBF详情

IR2113-2PBF中文资料

厂家型号

IR2113-2PBF

文件大小

328.55Kbytes

页面数量

18

功能描述

HIGH AND LOW SIDE DRIVER

功率驱动器IC HI LO SIDE DRVR 600V 2A 120ns

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IR2113-2PBF数据手册规格书PDF详情

Description

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Features

• Floating channel designed for bootstrap operation

Fully operational to +500V or +600V

Tolerant to negative transient voltage dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V logic compatible

Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs

IR2113-2PBF产品属性

  • 类型

    描述

  • 型号

    IR2113-2PBF

  • 功能描述

    功率驱动器IC HI LO SIDE DRVR 600V 2A 120ns

  • RoHS

  • 制造商

    Micrel

  • 产品

    MOSFET Gate Drivers

  • 类型

    Low Cost High or Low Side MOSFET Driver

  • 电源电压-最大

    30 V

  • 电源电压-最小

    2.75 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-8

  • 封装

    Tube

更新时间:2025-10-5 13:00:00
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原装现货/欢迎来电咨询