IR2118价格
参考价格:¥7.4034
型号:IR2118PBF 品牌:INTERNATIONAL 备注:这里有IR2118多少钱,2026年最近7天走势,今日出价,今日竞价,IR2118批发/采购报价,IR2118行情走势销售排行榜,IR2118报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR2118 | SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf | IRF | ||
IR2118 | SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf | IRF | ||
IR2118 | Gate drive supply range from 10 to 20V Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf | IRF | ||
IR2118 | 600 V 单高侧栅极驱动器 IC,带单输入 600 V 高边驱动器 IC,具有典型的 0.25 A 拉电流和 0.5 A 灌电流,采用 8 引脚 PDIP 封装,适用于 IGBT 和 MOSFET。也有 8 引脚 SOIC 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 600V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围:10 至 20V\n• 欠压锁定\n• 具有下拉的 CMOS 施密特触发输入\n• 输出与输入 (IR2118) 不同相或与输入 (IR2117 ) 同相\n\n优势:; | INFINEON 英飞凌 | ||
IR2118 | 封装/外壳:8-DIP(0.300",7.62mm) 包装:散装 描述:IC GATE DRVR HIGH-SIDE 8DIP 集成电路(IC) 栅极驱动器 | INFINEON 英飞凌 | ||
IR2118 | SINGLE CHANNEL DRIVER 文件:269.58 Kbytes Page:18 Pages | INFINEON 英飞凌 | ||
SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf | IRF | |||
SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf | IRF | |||
600 V 单高侧栅极驱动器 IC,带单输入 600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. • Floating channel designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage\n• dV/dt immune\n• Gate drive supply range from 10 to 20 V\n• Undervoltage lockout\n• CMOS Schmitt-triggered inputs with pull-down\n• Output out of phase with input (IR2118) o; | INFINEON 英飞凌 | |||
SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf | IRF | |||
SINGLE CHANNEL DRIVER Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf | IRF | |||
SINGLE CHANNEL DRIVER 文件:269.58 Kbytes Page:18 Pages | INFINEON 英飞凌 | |||
封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR HIGH-SIDE 8SOIC 集成电路(IC) 栅极驱动器 | INFINEON 英飞凌 | |||
BUS CONTROLLED PAL/SECAM/NTSC TV PROCESSOR DESCRIPTION The STV2118B is a fully bus controlled IC for TV luma, chroma and deflection processing. Used with STV8224 (PIF/SIF/switches), TDA1771 or TDA8174(frame booster), STV2180(delay line), it allows to design a PAL/SECAM/NTSC (BGDKILMN) set with very few external components and no adjustme | STMICROELECTRONICS 意法半导体 | |||
Silicon PNP epitaxial planer transistor Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | |||
Power Minder??Mini-Board 文件:369.94 Kbytes Page:5 Pages | TI 德州仪器 | |||
Power Minder??Mini-Board 文件:369.94 Kbytes Page:5 Pages | TI 德州仪器 | |||
MONAURAL MICROPHONE AMPLIFIER 文件:122.5 Kbytes Page:4 Pages | NJRC 日本无线 |
IR2118产品属性
- 类型
描述
- Product Status:
active
- Voltage Class:
600 V
- Output Current Source min:
0.2 A
- Output Current Source:
0.25 A
- Output Current Sink min:
0.42 A
- Output Current Sink:
0.5 A
- Channels:
1
- Configuration:
High-side
- Qualification:
Industrial
- Isolation Type:
Functional levelshift
- Switch Type:
IGBT/MOSFET
- Package name:
PDIP8
- UVLO Input Off:
8.2 V
- UVLO Output Off:
8.2 V
- Turn On Propagation Delay max:
200 ns
- Turn On Propagation Delay:
125 ns
- Turn Off Propagation Delay max:
180 ns
- Turn Off Propagation Delay:
105 ns
- Input Vcc min:
10 V
- Input Vcc max:
20 V
- Output Vbs min:
10 V
- Output Vbs max:
20 V
- Rise Time max:
130 ns
- Rise Time:
80 ns
- Fall Time max:
65 ns
- Fall Time:
40 ns
- UVLO Input On:
8.6 V
- UVLO Output On:
8.6 V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
DIP8 |
15000 |
全新原装现货,价格优势。 |
|||
INFINEON/英飞凌 |
25+ |
SOP-8 |
32000 |
INFINEON/英飞凌全新特价IR2118STRPBF即刻询购立享优惠#长期有货 |
|||
Infineon |
21+ |
SOIC-8 |
2500 |
保证原装正品 深圳现货 |
|||
IR |
22+ |
原厂封装 |
9025 |
原装正品,实单请联系 |
|||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
24+ |
SOP8 |
9600 |
原装现货,优势供应,支持实单! |
|||
IR |
2025+ |
DIPSOP |
5000 |
原装进口价格优 请找坤融电子! |
|||
IR |
97/98+ |
DIP/8 |
170 |
原装现货海量库存欢迎咨询 |
|||
IR |
2023+ |
DIP |
5800 |
进口原装,现货热卖 |
|||
IR |
2023+ |
30000 |
进口原装现货 |
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2018-12-28IR2117-单通道驱动器
IR2117/IR2118(S)是一种高电压,高速功率MOSFET和IGBT驱动器。专有的HVIC和锁存免疫CMOS技术,让坚固耐用单片式结构。逻辑输入兼容与标准CMOS输出。输出驱动器的功能专为高脉冲电流缓冲级最低跨导。浮动通道可以可以用来驱动一个N沟道功率MOSFET或IGBT在高或低侧配置经营至600伏特。 特点 •浮动通道引导操作设计完全运作,以600 V容限来负瞬态电压的dV / dt的免疫 •门极驱动电源电压范围从10至20V •欠压锁定 •CMOS施密特触发输
2012-11-13
DdatasheetPDF页码索引
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