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IR2110价格
参考价格:¥646.4218
型号:IR2110L4 品牌:INTERNATIONAL RECTIFIER 备注:这里有IR2110多少钱,2025年最近7天走势,今日出价,今日竞价,IR2110批发/采购报价,IR2110行情走势销售排行榜,IR2110报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IR2110 | HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | ||
IR2110 | IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Features • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Separate logic supply range from 3. | SYC | ||
IR2110 | 封装/外壳:14-DIP(0.300",7.62mm) 包装:散装 描述:IC GATE DRVR HALF-BRIDGE 14DIP 集成电路(IC) 栅极驱动器 | Infineon 英飞凌 | ||
IR2110 | HIGH AND LOW SIDE DRIVER 文件:491.79 Kbytes Page:17 Pages | Infineon 英飞凌 | ||
IR2110 | HIGH AND LOW SIDE DRIVER 文件:334.13 Kbytes Page:18 Pages | IRF | ||
IR2110 | HIGH VOLTAGE MOS GATE DRIVER 文件:9.50242 Mbytes Page:24 Pages | IRF | ||
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | |||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | |||
HIGH VOLTAGE MOS GATE DRIVER 文件:9.50242 Mbytes Page:24 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:334.13 Kbytes Page:18 Pages | IRF | |||
封装/外壳:14-DIP(0.300",7.62mm),13 引线 包装:管件 描述:IC GATE DRVR HALF-BRIDGE 14DIP 集成电路(IC) 栅极驱动器 | Infineon 英飞凌 | |||
HIGH AND LOW SIDE DRIVER 文件:206.91 Kbytes Page:14 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:127.77 Kbytes Page:14 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:206.91 Kbytes Page:14 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:143.13 Kbytes Page:14 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:139.07 Kbytes Page:14 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:253.12 Kbytes Page:14 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:253.12 Kbytes Page:14 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:253.12 Kbytes Page:14 Pages | IRF | |||
HIGH AND LOW SIDE DRIVER 文件:491.79 Kbytes Page:17 Pages | Infineon 英飞凌 | |||
5쩍-Digit Dual-Display Digital Multimeter 文件:864.59 Kbytes Page:4 Pages | TEKTRONIXTektronix 泰克泰克科技(中国)有限公司 | |||
Snap Bushings 文件:133.28 Kbytes Page:1 Pages | HeycoHeyco. 海科 | |||
Non-Relampable Neon-Incandescent Indicator Lights 文件:65.2 Kbytes Page:1 Pages | VCC Visual Communications Company | |||
Fieldbus, 2 Pr #16 Str TC, XLPO Ins, IS/OS, TPE Jkt, CMG 文件:256.45 Kbytes Page:3 Pages | BELDEN 百通 | |||
Neon-Incandescent Indicator Lights 文件:228.35 Kbytes Page:1 Pages | CML |
IR2110产品属性
- 类型
描述
- 型号
IR2110
- 功能描述
IC DRIVER HIGH/LOW SIDE 14-DIP
- RoHS
否
- 类别
集成电路(IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关
- 系列
-
- 标准包装
50
- 系列
-
- 配置
高端
- 输入类型
非反相
- 延迟时间
200ns 电流 -
- 峰
250mA
- 配置数
1
- 输出数
1 高端电压 -
- 最大(自引导启动)
600V
- 电源电压
12 V ~ 20 V
- 工作温度
-40°C ~ 125°C
- 安装类型
通孔
- 封装/外壳
8-DIP(0.300,7.62mm)
- 供应商设备封装
8-DIP
- 包装
管件
- 其它名称
*IR2127
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
IR |
25+ |
DIP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
2016+ |
DIP |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IRF |
三年内 |
1983 |
只做原装正品 |
||||
INFINEON/英飞凌 |
25+ |
SOP-16 |
32000 |
INFINEON/英飞凌全新特价IR2110STRPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
DIP14 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
INFINEON/英飞凌 |
2025+ |
DIP14 |
32000 |
原装正品现货供应商原厂渠道物美价优 |
|||
IR |
24+/25+ |
490 |
原装正品现货库存价优 |
||||
IR/INFINEON |
2024+ |
SOIC-16 |
500000 |
诚信服务,绝对原装原盘 |
IR2110规格书下载地址
IR2110参数引脚图相关
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- IR2118S
- IR2118
- IR2117SPBF
- IR2117S
- IR2117PBF
- IR2117
- IR2114SSPBF
- IR21141SSPBF
- IR2113STRPBF-CUTTAPE
- IR2113STRPBF
- IR2113SPBF
- IR2113S
- IR2113PBF
- IR2113
- IR2112STRPBF
- IR2112SPBF
- IR2112S
- IR2112PBF
- IR2112
- IR2111STRPBF
- IR2111SPBF
- IR2111S
- IR2111PBF
- IR2111
- IR2110STRPBF
- IR2110SPBF
- IR2110SHR
- IR2110S
- IR2110PBF
- IR2110L4
- IR2110L
- IR211
- IR2109STRPBF
- IR2109SPBF
- IR2109S
- IR2109PBF
- IR21094STRPBF
- IR21094SPBF
- IR21094PBF
- IR21094
- IR21091STRPBF
- IR21091SPBF
- IR21091PBF
- IR21091
- IR2109
- IR2108STRPBF
- IR2108SPBF
- IR2108S
- IR2108PBF
- IR21084SPBF
- IR21084PBF
- IR21084
- IR2108
- IR21074
- IR2107
- IR2106STRPBF
- IR2106SPBF
- IR2106S
- IR2106PBF
- IR21064STRPBF
- IR21064SPBF
- IR21064PBF
- IR21064
- IR2106
- IR2105S
- IR2105
- IR2104S
- IR2104
- IR2103S
- IR2103
- IR2102S
IR2110数据表相关新闻
IR2110STRPBF
IR2110STRPBF
2023-4-14IR2104STRPBF
IR2104STRPBF
2021-8-9IR2104STRPBF 原装代理现货 可追溯原厂含税出
IR2104STRPBF 原装代理现货 可追溯原厂含税出
2020-11-9IR2110
IR2110,全新原装当天发货或门市自取0755-82732291.
2019-8-25IR2111
IR2111,全新原装当天发货或门市自取0755-82732291.
2019-8-21IR2103-半桥驱动器
说明 在IR2103(S)的高电压,高速动力供养高,MOSFET和IGBT驱动器低侧参考输出通道。专有的HVIC免疫和闩锁的CMOS技术使坚固耐用单片建设。逻辑输入兼容标准CMOS或LSTTL输出,下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级,设计为最小驱动器跨导。浮动通道可以用来驱动一个N沟道功率MOSFET在高端配置的可在高达600伏或IGBT。 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠压锁定
2013-2-9
DdatasheetPDF页码索引
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