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IR2110价格
参考价格：￥646.4218
型号：IR2110L4 品牌：INTERNATIONAL RECTIFIER 备注：这里有IR2110多少钱，2026年最近7天走势，今日出价，今日竞价，IR2110批发/采购报价，IR2110行情走势销售排行榜，IR2110报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR2110 | HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF |   | |
IR2110 | IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Features • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Separate logic supply range from 3. | SYC | | |
IR2110 | HIGH AND LOW SIDE DRIVER 文件：491.79 Kbytes Page：17 Pages | Infineon 英飞凌 | | |
IR2110 | 封装/外壳：14-DIP（0.300"，7.62mm） 包装：散装 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | |
IR2110 | 具有关断功能的 500 V 高侧和低侧栅极驱动器 IC | Infineon 英飞凌 | | |
IR2110 | HIGH AND LOW SIDE DRIVER 文件：334.13 Kbytes Page：18 Pages | IRF | | |
IR2110 | HIGH VOLTAGE MOS GATE DRIVER 文件：9.50242 Mbytes Page：24 Pages | IRF | | |
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o | IRF | | ||
HIGH VOLTAGE MOS GATE DRIVER 文件：9.50242 Mbytes Page：24 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：334.13 Kbytes Page：18 Pages | IRF | | ||
封装/外壳：14-DIP（0.300"，7.62mm），13 引线 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER 文件：206.91 Kbytes Page：14 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：127.77 Kbytes Page：14 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：206.91 Kbytes Page：14 Pages | IRF | | ||
High-side And Low-side Driver | Infineon 英飞凌 | | ||
高可靠性功率 IC | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER 文件：143.13 Kbytes Page：14 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：139.07 Kbytes Page：14 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：253.12 Kbytes Page：14 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：253.12 Kbytes Page：14 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：253.12 Kbytes Page：14 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：491.79 Kbytes Page：17 Pages | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER 文件：491.79 Kbytes Page：17 Pages | Infineon 英飞凌 | | ||
Snap Bushings 文件：133.28 Kbytes Page：1 Pages | Heyco | | ||
5쩍-Digit Dual-Display Digital Multimeter 文件：864.59 Kbytes Page：4 Pages | TEKTRONIX 泰克 | | ||
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IR2110产品属性
- 类型
描述
- 型号
IR2110
- 功能描述
IC DRIVER HIGH/LOW SIDE 14-DIP
- RoHS
否
- 类别
集成电路(IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关
- 系列
-
- 标准包装
50
- 系列
-
- 配置
高端
- 输入类型
非反相
- 延迟时间
200ns 电流 -
- 峰
250mA
- 配置数
1
- 输出数
1 高端电压 -
- 最大（自引导启动）
600V
- 电源电压
12 V ~ 20 V
- 工作温度
-40°C ~ 125°C
- 安装类型
通孔
- 封装/外壳
8-DIP（0.300，7.62mm）
- 供应商设备封装
8-DIP
- 包装
管件
- 其它名称
*IR2127
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
DIP14 |
9600 |
原装现货,优势供应,支持实单! |
|||
IRF |
三年内 |
1983 |
只做原装正品 |
||||
IR |
13+ |
SOP16 |
50000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IR2110STRPBF,欢迎咨询洽谈。 |
|||
IR |
25+ |
DIP14L |
1100 |
强调现货,随时查询! |
|||
IR |
2447 |
DIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
1923+ |
DIP |
3689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
IOR |
23+ |
DIP16 |
3500 |
绝对全新原装!现货!特价!请放心订购! |
|||
24+ |
DIP |
55 |
|||||
IR |
03+ |
原厂原装 |
6000 |
自己公司全新库存绝对有货 |
|||
IR |
18+ |
DIP14 |
27053 |
全新原装现货,可出样品,可开增值税发票 |
IR2110芯片相关品牌
IR2110规格书下载地址
IR2110参数引脚图相关
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- IR2106SPBF
- IR2106S
- IR2106PBF
- IR21064STRPBF
- IR21064SPBF
- IR21064PBF
- IR21064
- IR2106
- IR2105S
- IR2105
- IR2104S
- IR2104
- IR2103S
- IR2103
- IR2102S
IR2110数据表相关新闻
IR2110STRPBF
IR2110STRPBF
2023-4-14IR2104STRPBF
IR2104STRPBF
2021-8-9IR2104STRPBF 原装代理现货 可追溯原厂含税出
IR2104STRPBF 原装代理现货 可追溯原厂含税出
2020-11-9IR2110
IR2110，全新原装当天发货或门市自取0755-82732291.
2019-8-25IR2111
IR2111，全新原装当天发货或门市自取0755-82732291.
2019-8-21IR2103-半桥驱动器
说明 在IR2103（S）的高电压，高速动力供养高，MOSFET和IGBT驱动器低侧参考输出通道。专有的HVIC免疫和闩锁的CMOS技术使坚固耐用单片建设。逻辑输入兼容标准CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，设计为最小驱动器跨导。浮动通道可以用来驱动一个N沟道功率MOSFET在高端配置的可在高达600伏或IGBT。 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠压锁定
2013-2-9
DdatasheetPDF页码索引
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