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位置：首页 > IC中文资料 > IR2110

IR2110价格

参考价格：￥646.4218

型号：IR2110L4 品牌：INTERNATIONAL RECTIFIER 备注：这里有IR2110多少钱，2026年最近7天走势，今日出价，今日竞价，IR2110批发/采购报价，IR2110行情走势销售排行榜，IR2110报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IR2110

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110

IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF

Features • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Separate logic supply range from 3.

SYC

IR2110

具有关断功能的 500 V 高侧和低侧栅极驱动器 IC

500 V High and Low Side Driver IC with typical 2.5 A source and 2.5 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOIC WB. • Floating channel designed for bootstrap operation\n• Fully operational to +500 V\n• Fully operational to +600 V verstion available (IR2113\n• dV/dt immune\n• Gate drive supply range from 10 to 20 V\n• Undervoltage lockout for both channels\n• 3.3 V logic compatible\n• Separate logic supply range f;

INFINEON

英飞凌

IR2110

HIGH AND LOW SIDE DRIVER

文件：334.13 Kbytes Page：18 Pages

IRF

IR2110

HIGH AND LOW SIDE DRIVER

文件：491.79 Kbytes Page：17 Pages

INFINEON

英飞凌

IR2110

HIGH VOLTAGE MOS GATE DRIVER

文件：9.50242 Mbytes Page：24 Pages

IRF

IR2110

封装/外壳：14-DIP（0.300"，7.62mm） 包装：散装 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC） 栅极驱动器

INFINEON

英飞凌

IR2110-1

IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110-1PBF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110-2PBF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110E6

HIGH AND LOW SIDE DRIVER

Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

IRF

IR2110L6

HIGH AND LOW SIDE DRIVER

Description The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

IRF

IR2110PBF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110S

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110SPBF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110STR

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110STRPBF

HIGH AND LOW SIDE DRIVER

Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS o

IRF

IR2110_1

HIGH VOLTAGE MOS GATE DRIVER

文件：9.50242 Mbytes Page：24 Pages

IRF

IR2110_15

HIGH AND LOW SIDE DRIVER

文件：334.13 Kbytes Page：18 Pages

IRF

IR2110-1PBF

封装/外壳：14-DIP（0.300"，7.62mm），13 引线 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC） 栅极驱动器

INFINEON

英飞凌

IR2110E4

HIGH AND LOW SIDE DRIVER

文件：127.77 Kbytes Page：14 Pages

IRF

IR2110E4

HIGH AND LOW SIDE DRIVER

文件：206.91 Kbytes Page：14 Pages

IRF

IR2110E4_15

HIGH AND LOW SIDE DRIVER

文件：206.91 Kbytes Page：14 Pages

IRF

IR2110E4SCB

High-side And Low-side Driver

INFINEON

英飞凌

IR2110E4SCS

高可靠性功率 IC

INFINEON

英飞凌

IR2110L

HIGH AND LOW SIDE DRIVER

文件：143.13 Kbytes Page：14 Pages

IRF

IR2110L4

HIGH AND LOW SIDE DRIVER

文件：139.07 Kbytes Page：14 Pages

IRF

IR2110L4

HIGH AND LOW SIDE DRIVER

文件：253.12 Kbytes Page：14 Pages

IRF

IR2110L4_15

HIGH AND LOW SIDE DRIVER

文件：253.12 Kbytes Page：14 Pages

IRF

IR2110L4SCS

HIGH AND LOW SIDE DRIVER

文件：253.12 Kbytes Page：14 Pages

IRF

IR2110S

HIGH AND LOW SIDE DRIVER

文件：491.79 Kbytes Page：17 Pages

INFINEON

英飞凌

IR2110STRPBF

HIGH AND LOW SIDE DRIVER

文件：491.79 Kbytes Page：17 Pages

INFINEON

英飞凌

NJM2110

MONORAL MIC AMP for VIDEO CAMERA

■ GENERAL DESCRIPTION NJM2110 is a monaural microphone amplifier for video camera. It can operate from 2.7V. The performance is low Operating current and small package, therefore it is easy to design the downsizing and low consumption. ■ FEATURES ● Operating Voltage ( 2.7V~5.3V ) ● L

NJRC

日本无线

NJM2110M

MONORAL MIC AMP for VIDEO CAMERA

■ GENERAL DESCRIPTION NJM2110 is a monaural microphone amplifier for video camera. It can operate from 2.7V. The performance is low Operating current and small package, therefore it is easy to design the downsizing and low consumption. ■ FEATURES ● Operating Voltage ( 2.7V~5.3V ) ● L

NJRC

日本无线

NJM2110V

MONORAL MIC AMP for VIDEO CAMERA

■ GENERAL DESCRIPTION NJM2110 is a monaural microphone amplifier for video camera. It can operate from 2.7V. The performance is low Operating current and small package, therefore it is easy to design the downsizing and low consumption. ■ FEATURES ● Operating Voltage ( 2.7V~5.3V ) ● L

NJRC

日本无线

UN2110

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing

PANASONIC

松下

UPG2110TB

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

IR2110产品属性

  • 类型

    描述

  • Product Status：

    active/active

  • Voltage Class：

    500 V

  • Output Current Source min：

    2 A

  • Output Current Source：

    2.5 A

  • Output Current Sink min：

    2 A

  • Output Current Sink：

    2.5 A

  • Channels：

    2

  • Configuration：

    High-side and low-side

  • Qualification：

    Industrial

  • Isolation Type：

    Functional levelshift

  • Switch Type：

    IGBT/MOSFET

  • Package name：

    SOIC 16W/SOIC 16W

  • UVLO Input Off：

    8.2 V

  • UVLO Output Off：

    8.2 V

  • Turn On Propagation Delay max：

    150 ns

  • Turn On Propagation Delay：

    120 ns

  • Turn Off Propagation Delay max：

    125 ns

  • Turn Off Propagation Delay：

    94 ns

  • Input Vcc min：

    10 V

  • Input Vcc max：

    20 V

  • Output Vbs min：

    10 V

  • Output Vbs max：

    20 V

  • Rise Time max：

    35 ns

  • Rise Time：

    25 ns

  • Fall Time max：

    25 ns

  • Fall Time：

    17 ns

  • UVLO Input On：

    8.5 V

  • UVLO Output On：

    8.6 V

IR2110供应商更多...

更新时间：2026-8-1 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市英博尔电子有限公司
IR2110STRPBF
INFINEON
23+
SOP16
10000
全新、原装
询价
深圳市富利微电子科技有限公司
IR2110STRPBF
IR
26+
SOP-16
20540
保证进口原装现货假一赔十
询价
千层芯半导体(深圳)有限公司
IR2110L4SCS
IR/INFINEON
24+
SMD
600
“芯达集团”专营军工百分之百原装进口
询价
深圳市恒凯威科技开发有限公司
IR2110P
IR
21+
DIP14
9080
只做原装,质量保证
询价
深圳诚思涵科技有限公司
IR2110SPB
SOP16
2670
公司现货,价格绝对优势
询价
中天科工半导体（深圳）有限公司
IR2110STRPBF
INFINEON/英飞凌
25+
SOP-16
32000
INFINEON/英飞凌全新特价IR2110STRPBF即刻询购立享优惠#长期有货
询价
深圳市正纳电子有限公司
IR2110STRPBF
INFINEON
26+
SOIC-16_300mil
3000
原装正品可支持验货,欢迎咨询
询价
深圳市卓越微芯电子有限公司
IR2110PBF
IR
25+
DIP-14
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市昊创电子有限公司
IR2110E4SCB
IR
专业军工
LCC
860
只做原装正品现货授权货源
询价
深圳市粤骏腾电子科技有限公司
IR2110PBF
IR
26+
DIP-14
20000
原装正品现货
询价

IR2110芯片相关品牌

IR2110规格书下载地址

IR2110参数引脚图相关

IR2110数据表相关新闻

  • IR2110STRPBF 半桥栅极驱动芯片 高低侧双通道驱动器件现货

    IR2110STRPBF 为国际整流器品牌推出的专用栅极驱动芯片，专门用于驱动 MOS 管、IGBT 等功率器件，驱动能力扎实，信号传输稳定，隔离效果良好

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  • IR2110STRPBF

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    2021-8-9

  • IR2104STRPBF 原装代理现货 可追溯原厂含税出

    IR2104STRPBF 原装代理现货 可追溯原厂含税出

    2020-11-9

  • IR2110

    IR2110，全新原装当天发货或门市自取0755-82732291.

    2019-8-25

  • IR2103-半桥驱动器

    说明 在IR2103（S）的高电压，高速动力供养高，MOSFET和IGBT驱动器低侧参考输出通道。专有的HVIC免疫和闩锁的CMOS技术使坚固耐用单片建设。逻辑输入兼容标准CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，设计为最小驱动器跨导。浮动通道可以用来驱动一个N沟道功率MOSFET在高端配置的可在高达600伏或IGBT。 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠压锁定

    2013-2-9

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