40 V、N沟道、最大4.3 mΩ、汽车MOSFET、DPAK、OptiMOS ™ -T

• N沟道 - 增强模式\n • 符合汽车 AEC Q101 标准\n • MSL1 最高回流温度可达 260°C 峰值\n • 工作温度为 175°C\n • 绿色封装（符合 RoHS 标准）\n • 100% Avalanche 测试\n • 支持 PPAP 的设备;

40 V、N 沟道、最大 2.4 mΩ、汽车 MOSFET、DPAK、OptiMOS ™ -T2

• N-channel - Enhancement mode\n• Automotive AEC Q101 qualified\n• MSL1 up to 260°C peak reflow\n• 175°C operating temperature\n• Green Package (RoHS compliant)\n• 100% Avalanche tested\n\n优势:\n• Low switching and conduction power losses for highest thermal efficiency\n• Robust packages with sup;

20V-650V汽车级MOSFET

• N-channel - Enhancement mode\n• Automotive AEC Q101 qualified\n• MSL1 up to 260°C peak reflow\n• 175°C operating temperature\n• Green Package (RoHS compliant)\n• 100% Avalanche tested\n\n优势:\n• Low switching and conduction power losses for highest thermal efficiency\n• Robust packages with sup;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

OptiMOS-T Power-Transistor

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current ra

MOS FIELD EFFECT TRANSISTOR

Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a

丝印代码：HM90N04D；N-Channel Enhancement Mode Power MOSFET

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丝印代码：HMS90N04D；N-Channel Super Trench Power MOSFET

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Product Scout Automotive

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