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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4Bank x 1M x 16bits Synchronous DRAM DESCRIPTION \nThe Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16.\nHY57V641620E(L/S)T(P) is offering fully s • Voltage: VDD, VDDQ 3.3V supply voltage\n• All device pins are compatible with LVTTL interface\n• 54 Pin TSOPII (Lead or Lead Free Package)\n• All inputs and outputs referenced to positive edge of system clock\n• Data mask function by UDQM, LDQM\n• Internal four banks operation\n• Auto refresh and ; | HYNIX 海力士 |   | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION\nThe Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation referenced • Single 3.3±0.3V power supply Note)\n• All device pins are compatible with LVTTL interface\n• JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch\n• All inputs and outputs referenced to positive edge of system clock\n• Data mask function by UDQM or LDQM\n• Internal four banks operation\n• A; | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | HYNIX 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | HYNIX 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O | HYNIX 海力士 | |
HY57V64162产品属性
- 类型
描述
- 型号
HY57V64162
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
20+ |
DIP |
88720 |
红外全新原装主营-可开原型号增税票 |
|||
HY |
26+ |
TQFP-100 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HY/华羿微 |
23+ |
TO-247 |
20000 |
||||
HY/华羿微 |
25+ |
TO-247 |
10000 |
公司原装现货一片起送靠谱 |
|||
HY |
22+ |
SOP-8 |
5000 |
只做原装鄙视假货15118075546 |
|||
FEELING |
25+ |
SOP8 |
2518 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HY原装 |
25+23+ |
DIP-4 |
27167 |
绝对原装正品全新进口深圳现货 |
|||
HY |
25+ |
BGA |
9630 |
我们只做原装正品现货!量大价优! |
|||
FEELING |
25+ |
SOP8 |
10000 |
原装现货假一罚十 |
|||
香港HY |
24+ |
DIP |
6789 |
HY57V64162芯片相关品牌
HY57V64162规格书下载地址
HY57V64162参数引脚图相关
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- HY6060W
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- HY5V52F
- HY5-P
- HY5N50T
- HY57V641620HGLT-5
- HY57V641620HG-I
- HY57V641620HG
- HY57V641620FTP-HIDR-C
- HY57V641620FTP-HI-C
- HY57V641620FTP-H-C
- HY57V641620FTP-7DR-C
- HY57V641620FTP-6DR-C
- HY57V641620FTP-6-C
- HY57V641620ET-H
- HY57V641620ET-5
- HY57V641620ET
- HY57V641620ESTP-H
- HY57V641620ESTP-7
- HY57V641620ESTP-6
- HY57V641620ESTP-5
- HY57V641620ELTP-H
- HY57V641620ELTP-7
- HY57V641620ELTP-6
- HY57V641620ELTP-5
- HY57V56820HT-8
- HY57V56820HT-6
- HY57V56820HT
- HY57V56820HLT-S
- HY57V56820HLT-P
- HY57V56820HLT-K
- HY57V56820HLT-H
- HY57V56820HLT-8
- HY57V56820HLT-6
- HY57V56820HLT
- HY57V56820CT-S
- HY57V56820CT-P
- HY57V56820CT-K
- HY57V56820CT-H
- HY57V56820CT-8
- HY57V56820CT-6
- HY57V56820CT
- HY57V56820CLT-S
- HY57V56820CLT-P
- HY57V56820CLT-K
- HY-5610
- HY-53
- HY5204W
- HY5204A
- HY5110W
- HY5110A
- HY50-P
- HY50P
- HY4N70T
- HY4N70M
- HY4N70D
- HY4N65T
- HY4N65D
- HY4N60T
- HY4N60D
- HY4903P
- HY4903B
- HY46XX
- HY4504W
- HY4504P
HY57V64162数据表相关新闻
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
2020-1-13HY604808
HY604808，全新原装当天发货或门市自取0755-82732291.
2019-12-12HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY3912W
HY3912W，全新原装当天发货或门市自取0755-82732291.
2019-2-25
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