位置：首页 > IC中文资料第5503页 > HY57V641620HG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V641620HG | 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 |   | |
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | |
HY57V641620HG产品属性
- 类型
描述
- 型号
HY57V641620HG
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 1M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
24+ |
NA/ |
3330 |
原装现货,当天可交货,原型号开票 |
|||
HYINX |
25+ |
TSSOP |
996880 |
只做原装,欢迎来电资询 |
|||
SKHYNIX/海力士 |
09+ |
TSOP54 |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX |
2016+ |
SSOP |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HYNIX |
20+ |
TSOP |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
HYNIX/海力士 |
21+ |
TSOP54 |
10000 |
原装现货假一罚十 |
|||
HYNIX |
24+ |
TSOP54 |
44300 |
原装进口现货假一罚百 |
|||
HYNIX |
18+ |
SOP |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
HYNIX |
2450+ |
SSOP |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
HYNIX |
TSOP54 |
1000 |
正品原装--自家现货-实单可谈 |
HY57V641620HG规格书下载地址
HY57V641620HG参数引脚图相关
- iot
- igzo
- igbt驱动电路
- IGBT模块
- id卡
- ic元器件
- ic元件
- ic型号
- ic行业
- ic网
- ic市场
- ic设计
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- HY8N65T
- HY8N50T
- HY86-12
- HY860F
- HY7-P
- HY7N80T
- HY-7110
- HY6N60T
- HY6410
- HY6340
- HY6330
- HY6264A
- HY6264
- HY6116A
- HY-61
- HY6060W
- HY-60
- HY5V52F
- HY5-P
- HY5N50T
- HY57V641620HGT-7I
- HY57V641620HGT-7
- HY57V641620HGT-6I
- HY57V641620HGT-6
- HY57V641620HGT6
- HY57V641620HGT-5I
- HY57V641620HGT-55I
- HY57V641620HGT-55
- HY57V641620HGT-5
- HY57V641620HGLT-8I
- HY57V641620HGLT-8
- HY57V641620HGLT-7I
- HY57V641620HGLT-7
- HY57V641620HGLT-6I
- HY57V641620HGLT-6
- HY57V641620HGLT-5I
- HY57V641620HGLT-55I
- HY57V641620HGLT-55
- HY57V641620HGLT-5
- HY57V641620HG-I
- HY57V641620FTP-HIDR-C
- HY57V641620FTP-HI-C
- HY57V641620FTP-H-C
- HY57V641620FTP-7DR-C
- HY57V641620FTP-6DR-C
- HY57V641620FTP-6-C
- HY57V641620ET-H
- HY57V641620ET-5
- HY57V641620ET
- HY57V641620ESTP-H
- HY57V641620ESTP-7
- HY57V641620ESTP-6
- HY57V641620ESTP-5
- HY57V641620ELTP-H
- HY57V641620ELTP-7
- HY57V641620ELTP-6
- HY57V641620ELTP-5
- HY57V56820HT-8
- HY57V56820HT-6
- HY57V56820HT
- HY-5610
- HY-53
- HY5204W
- HY5204A
- HY5110W
- HY5110A
- HY50-P
- HY50P
- HY4N70T
- HY4N70M
- HY4N70D
- HY4N65T
- HY4N65D
- HY4N60T
- HY4N60D
- HY4903P
- HY4903B
- HY46XX
- HY4504W
- HY4504P
HY57V641620HG数据表相关新闻
HY628400LG-70
www.jskj-ic.com
2021-9-9HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
2020-1-13HY604808
HY604808，全新原装当天发货或门市自取0755-82732291.
2019-12-12HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
