位置：首页 > IC中文资料第189页 > HY57V641620HGT-H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V641620HGT-H | 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 |   | |
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | |
HY57V641620HGT-H产品属性
- 类型
描述
- 型号
HY57V641620HGT-H
- 制造商
SK Hynix Inc
- 功能描述
SDRAM, 4M x 16, 54 Pin, Plastic, TSOP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
23+ |
TSSOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
HYNIX |
05+ |
TSOP54 |
3560 |
全新原装进口自己库存优势 |
|||
HYNIX |
24+ |
原厂封装 |
8179 |
原装现货假一罚十 |
|||
HYHIX |
23+ |
TSOP |
12000 |
全新原装假一赔十 |
|||
HYNIX |
25+ |
TSOP54 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
HYNIX |
20+ |
TSOP54 |
19570 |
原装优势主营型号-可开原型号增税票 |
|||
HYNIX |
25+ |
SOP |
18000 |
原厂直接发货进口原装 |
|||
HYNIX/海力士 |
24+ |
TSOP |
6000 |
全新原装,一手货源,全场热卖! |
|||
HY |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
HYNIX |
TSOP54 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
HY57V641620HGT-H芯片相关品牌
HY57V641620HGT-H规格书下载地址
HY57V641620HGT-H参数引脚图相关
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- HY57V641620HGT-5
- HY57V641620HGLT-8I
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HY57V641620HGT-H数据表相关新闻
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-21
DdatasheetPDF页码索引
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