位置：首页 > IC中文资料第5624页 > HY57V641620HGT-P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V641620HGT-P | 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 |   | |
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | |
HY57V641620HGT-P产品属性
- 类型
描述
- 型号
HY57V641620HGT-P
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 1M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
24+ |
NA/ |
192 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HY |
2016+ |
TSSOP |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HY |
0429+ |
TSOP |
2145 |
全新原装进口自己库存优势 |
|||
HYNIX |
25+ |
TSOP |
65248 |
百分百原装现货 实单必成 |
|||
HY |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
HYNIX |
0151+ |
TSOP54 |
192 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX |
20+ |
TSOP54 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
HYNIX/海力士 |
21+ |
TSOP |
10000 |
原装现货假一罚十 |
|||
HYNIX |
1950+ |
TSOP54 |
4856 |
只做原装正品现货!或订货假一赔十! |
|||
HYNIX |
TSOP |
1200 |
正品原装--自家现货-实单可谈 |
HY57V641620HGT-P芯片相关品牌
HY57V641620HGT-P规格书下载地址
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HY57V641620HGT-P数据表相关新闻
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DdatasheetPDF页码索引
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