位置：首页 > IC中文资料第5624页 > HY57V641620HGT-S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V641620HGT-S | 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 |   | |
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | |
HY57V641620HGT-S产品属性
- 类型
描述
- 型号
HY57V641620HGT-S
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 1M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
24+ |
NA/ |
3500 |
原装现货,当天可交货,原型号开票 |
|||
HYNIX |
1421+ |
SSOP |
250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX |
25+ |
TSOP |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
HYNIX |
21+ |
TSOP |
10000 |
原装现货假一罚十 |
|||
HYNIX |
1020+ |
TSSOP-54 |
15367 |
只做原厂原装,认准宝芯创配单专家 |
|||
HYNIX |
25+ |
TSOP |
2500 |
强调现货,随时查询! |
|||
HY |
6000 |
面议 |
19 |
TSOP |
|||
HY |
23+ |
TSOP |
3938 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
HYNIX |
2007 |
TSOP |
394 |
原装现货海量库存欢迎咨询 |
|||
HYNIX |
24+ |
SOP |
1250 |
HY57V641620HGT-S芯片相关品牌
HY57V641620HGT-S规格书下载地址
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HY57V641620HGT-S数据表相关新闻
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2019-4-21
DdatasheetPDF页码索引
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