位置：首页 > IC中文资料 > HY57V641620HGLT-P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V641620HGLT-P | 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 |   | |
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous opera | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O DESCRIPTION The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering f | Hynix 海力士 | | ||
4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation refere | Hynix 海力士 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
QFP |
5 |
|||||
HYNIX |
23+ |
TSOP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Skhynix |
1844+ |
TSOP54 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HY57V641620HGT |
132 |
132 |
|||||
HYNIX |
23+ |
TSOP-54 |
30000 |
代理全新原装现货,价格优势 |
|||
HY |
25+23+ |
TSOP |
36980 |
绝对原装正品全新进口深圳现货 |
|||
HYUNDAI |
25+ |
N/A |
2500 |
强调现货,随时查询! |
|||
HYNIX |
24+ |
NA/ |
119 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HY |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
|||
HYUNDAI |
2025+ |
TSSOP54 |
3768 |
全新原厂原装产品、公司现货销售 |
HY57V641620HGLT-P芯片相关品牌
HY57V641620HGLT-P规格书下载地址
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DdatasheetPDF页码索引
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