型号 功能描述 生产厂家 企业 LOGO 操作
HGTG20N120

34A, 1200V N-Channel IGBT

Description The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop vari

INTERSIL

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction los

INTERSIL

63A, 1200V, NPT Series N-Channel IGBT

63A, 1200V, NPT Series N-Channel IGBT The HGTG20N120CN is aNon-PunchThrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET a

INTERSIL

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

INTERSIL

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

FAIRCHILD

仙童半导体

NPT Series N-Channel IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC=20A · 1200V Switching SOA Capability · Short Circuit Rating · Low Conduction Loss APPLICATIONS · AC and DC Motor Controls · Power Supplies · Drivers for Solenoids, Relays and Contactors

ISC

无锡固电

34A, 1200V N-Channel IGBT

Description The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop vari

INTERSIL

63A, 1200V, NPT Series N-Channel IGBT

RENESAS

瑞萨

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

INTERSIL

General purpose inverters

文件:820.86 Kbytes Page:9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件:769.26 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

1200V, 20A Trench IGBT

文件:721.12 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

1200V, 20A Trench IGBT

文件:721.12 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

HGTG20N120产品属性

  • 类型

    描述

  • 型号

    HGTG20N120

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    34A, 1200V N-Channel IGBT

更新时间:2026-2-18 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
23+
TO-247
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
54000
一级代理-主营优势-实惠价格-不悔选择
INTERSIL
23+
TO-247
8400
专注配单,只做原装进口现货
FAIRCHILD/仙童
23+
TO247
50000
全新原装正品现货,支持订货
Intersil
24+
TO-247
8866
FAIRCHILD
05+
原厂原装
4699
只做全新原装真实现货供应
INTERSIL
17+
TO-247
31518
原装正品 可含税交易
ITS
22+
原厂原装
20000
公司只做原装 品质保障
FAI
23+
65480
FAIRCHILD/仙童
25+
TO-3P
45000
FAIRCHILD/仙童全新现货HGTG20N120即刻询购立享优惠#长期有排单订

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