45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs

and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

Features

 45A, 1200V, TC = 25oC

 1200V Switching SOA Capability

 Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC

 Short Circuit Rating

 Low Conduction Loss