位置:G20N120 > G20N120详情

G20N120中文资料

厂家型号

G20N120

文件大小

93.09Kbytes

页面数量

7

功能描述

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INTERSIL

G20N120数据手册规格书PDF详情

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor.

Features

 63A, 1200V, TC = 25oC

 1200V Switching SOA Capability

 Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC

 Short Circuit Rating

 Low Conduction Loss

 

 

G20N120产品属性

  • 类型

    描述

  • 型号

    G20N120

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

更新时间:2025-10-10 19:10:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO 247
160969
明嘉莱只做原装正品现货
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23+
33
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
HARRIS
24+
TO-3P
76
哈里斯
06+
TO-247
3500
原装
23+
TO-3P
65480
台产
23+
TO-247
50000
全新原装正品现货,支持订货
IR
2022+
TO-247
12888
原厂代理 终端免费提供样品
IR
2025+
TO-3P
4675
全新原厂原装产品、公司现货销售
IR
23+
TO-247
8000
只做原装现货
IR
23+
TO-247
7000