位置：首页 > IC中文资料第6308页 > G20N120
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G20N120 | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has | INTERSIL |   | |
G20N120 | 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction los | INTERSIL | | |
G20N120 | 63A, 1200V, NPT Series N-Channel IGBT 63A, 1200V, NPT Series N-Channel IGBT The HGTG20N120CN is aNon-PunchThrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET a | INTERSIL | | |
G20N120 | 34A, 1200V N-Channel IGBT Description The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop vari | INTERSIL | | |
G20N120 | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has | FAIRCHILD 仙童半导体 | | |
G20N120 | 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | RENESAS 瑞萨 | | |
34A, 1200V N-Channel IGBT | RENESAS 瑞萨 | | ||
General purpose inverters 文件：820.86 Kbytes Page：9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | | ||
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package 文件：769.26 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
1200V, 20A Trench IGBT 文件：721.12 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
1200V, 20A Trench IGBT 文件：721.12 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | |
G20N120产品属性
- 类型
描述
- 型号
G20N120
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 247 |
160969 |
明嘉莱只做原装正品现货 |
|||
VISHAY原装 |
25+23+ |
TO-247 |
24543 |
绝对原装正品全新进口深圳现货 |
|||
HARRIS |
24+ |
TO-3P |
76 |
||||
SANYO |
0214+ |
TO-252 |
354 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
VISHAY |
26+ |
SOIC16 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
SANYO |
22+ |
TO-252 |
20000 |
公司只做原装 品质保障 |
|||
IR |
23+ |
TO-247 |
7000 |
||||
23+ |
TO-3P |
65480 |
|||||
IR |
2022+ |
TO-247 |
12888 |
原厂代理 终端免费提供样品 |
G20N120规格书下载地址
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2019-4-16
DdatasheetPDF页码索引
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