位置：首页 > IC中文资料第7759页 > H7N1002
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 |   | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：138.43 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：138.43 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：160.33 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：138.43 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：138.43 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：138.43 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：138.43 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：138.43 Kbytes Page：9 Pages | RENESAS 瑞萨 | |
H7N1002产品属性
- 类型
描述
- 型号
H7N1002
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
24+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
22+ |
TO263 |
7000 |
现货,原厂原装假一罚十! |
|||
RENESAS/瑞萨 |
21+ |
TO263 |
7000 |
||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
TO263 |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS |
25+ |
TO-263 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS |
25+23+ |
TO263 |
13803 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
23+ |
TO-252 |
47510 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
RENESAS/瑞萨 |
24+ |
TO263 |
54000 |
郑重承诺只做原装进口现货 |
H7N1002芯片相关品牌
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