型号 功能描述 生产厂家 企业 LOGO 操作
H7N0308LS

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

H7N0308LS

Power MOSFETs

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:81.02 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:81.02 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0308LS产品属性

  • 类型

    描述

  • 型号

    H7N0308LS

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2025-10-18 18:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
22+
TO263
8000
原装正品支持实单
RENESAS
24+
TO-251
9000
只做原装正品 有挂有货 假一赔十
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
23+
SOT-263
7300
专注配单,只做原装进口现货
RENESAS
24+
TO-251
16900
原装正品现货支持实单
RENESAS/瑞萨
23+
TO263
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
原装正品
23+
TO-252
50636
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
2023+
TO-251
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品

H7N0308LS数据表相关新闻