型号 功能描述 生产厂家 企业 LOGO 操作
H7N0308LS

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

H7N0308LS

Power MOSFETs

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:81.02 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:81.02 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0308LS产品属性

  • 类型

    描述

  • 型号

    H7N0308LS

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2026-1-5 21:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
R
25+
TO263
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
RENESAS
26+
TO-251
360000
进口原装现货
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS/瑞萨
22+
TO263
8000
原装正品支持实单
RENESAS
24+
TO-251
9000
只做原装正品 有挂有货 假一赔十
原装正品
23+
TO-252
50636
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
22+
TO-251
20000
公司只做原装 品质保障
RENESAS
23+
SOT-263
7300
专注配单,只做原装进口现货

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