型号 功能描述 生产厂家 企业 LOGO 操作
H7N0308CF

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

H7N0308CF

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

H7N0308CF

N-Channel 30-V (D-S) MOSFET

文件:1.62488 Mbytes Page:7 Pages

VBSEMI

微碧半导体

H7N0308CF

Transistors>Switching/MOSFETs

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:81.02 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:81.02 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0308CF产品属性

  • 类型

    描述

  • 型号

    H7N0308CF

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2026-1-3 15:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
RENESAS
22+
TO-252
20000
公司只做原装 品质保障
VBsemi(台湾微碧)
2447
TO-220F
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
RENESAS/瑞萨
23+
7300
专注配单,只做原装进口现货
RENESAS
24+
TO-220
9000
只做原装正品 有挂有货 假一赔十
RENESAS
24+
TO-252
16900
原装正品现货支持实单
NEC
23+
TO-252
50621
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
21+
TO220
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。

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