型号 功能描述 生产厂家 企业 LOGO 操作
H7N0308CF

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

HitachiHitachi Semiconductor

日立日立公司

H7N0308CF

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

H7N0308CF

N-Channel 30-V (D-S) MOSFET

文件:1.62488 Mbytes Page:7 Pages

VBSEMI

微碧半导体

H7N0308CF

Transistors>Switching/MOSFETs

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:81.02 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:81.02 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0308CF产品属性

  • 类型

    描述

  • 型号

    H7N0308CF

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2026-1-3 9:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
TO-252
50621
##公司主营品牌长期供应100%原装现货可含税提供技术
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
RENESAS/瑞萨
24+
TO220
60000
RENESAS/瑞萨
24+
65230
HITACHI/RENESAS
24+
TO-220F
200000
优质供应商,支持样品配送。原装诚信
RENESAS
25+
TO-252
8800
公司只做原装,详情请咨询
RENESAS
24+
TO-252
16900
原装正品现货支持实单
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
20+
TO-252
50
进口原装现货,假一赔十
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!

H7N0308CF数据表相关新闻