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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H7N0308AB-E | Silicon N Channel MOS FET High Speed Power Switching 文件：81.02 Kbytes Page：7 Pages | RENESAS 瑞萨 |   | |
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：81.02 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi(台湾微碧) |
2447 |
TO-220F |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
24+ |
TO-220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NEC |
23+ |
TO-252 |
50621 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
RENESAS |
21+ |
TO-220 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
R |
TO-220F |
22+ |
6000 |
十年配单,只做原装 |
|||
RENESAS |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS |
20+ |
TO-252 |
50 |
进口原装现货,假一赔十 |
|||
RENESAS |
2511 |
TO-252 |
50 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
23+ |
TO220F |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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DdatasheetPDF页码索引
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