型号 功能描述 生产厂家 企业 LOGO 操作
H7N0307LS

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0307LS产品属性

  • 类型

    描述

  • 型号

    H7N0307LS

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2026-1-4 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
53250
原装现货,当天可交货,原型号开票
RENESAS
TO-220
68552
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
26+
TO-251
360000
进口原装现货
RENESAS/瑞萨
2450+
TO263-3
6540
只做原装正品假一赔十为客户做到零风险!!
RENESAS
23+
TO-251
10065
原装正品,有挂有货,假一赔十
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
RENESAS/瑞萨
23+
TO220F
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
VBsemi(台湾微碧)
2447
TO-220F
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
RENESAS
23+
TO-220
7000

H7N0307LS数据表相关新闻