型号 功能描述 生产厂家 企业 LOGO 操作
H7N0307LS

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0307LS产品属性

  • 类型

    描述

  • 型号

    H7N0307LS

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2026-3-2 10:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
23+
TO-251
10065
原装正品,有挂有货,假一赔十
R
25+
TO263
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品
NK/南科功率
2025+
TO-263
986966
国产
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
22+
TO-251
20000
公司只做原装 品质保障
RENESAS
TO-220
68552
一级代理 原装正品假一罚十价格优势长期供货
RENESAS/瑞萨
23+
TO220F
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
23+
TO-2203L
69820
终端可以免费供样,支持BOM配单!

H7N0307LS数据表相关新闻