型号 功能描述 生产厂家 企业 LOGO 操作
H7N0307LS

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0307LS产品属性

  • 类型

    描述

  • 型号

    H7N0307LS

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2026-1-2 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
53250
原装现货,当天可交货,原型号开票
RENESAS
23+
TO-251
10065
原装正品,有挂有货,假一赔十
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
RENESAS
22+
TO-251
20000
公司只做原装 品质保障
RENESAS
23+
TO-220
7000
VBsemi(台湾微碧)
2447
TO-220F
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
RENESAS
24+
TO-251
16900
原装正品现货支持实单
RENESAS
23+
TO-263
48282
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
原厂封装
9800
原装进口公司现货假一赔百

H7N0307LS数据表相关新闻