型号 功能描述 生产厂家 企业 LOGO 操作
H7N0307LD

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

H7N0307LD

Transistors>Switching/MOSFETs

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:116.59 Kbytes Page:10 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:83.67 Kbytes Page:7 Pages

RENESAS

瑞萨

H7N0307LD产品属性

  • 类型

    描述

  • 型号

    H7N0307LD

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2025-10-19 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HIT/日立
SOT-263
6911
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
24+
TO-252
16900
原装正品现货支持实单
NEC
23+
TO-252
48280
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS
21+
TO-252
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
22+
TO-252
6000
十年配单,只做原装
RENESAS
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS
20+
TO-252
50
进口原装现货,假一赔十
RENESAS
23+
TO-252
50
全新原装正品现货,支持订货

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